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STD5N60DM2
+Lista de MateriaisMOSFET N-CH 600V 3.5A DPAK
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STD5N60DM2
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Ficha Técnica STD5N60DM2 DataSheet
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Especificações
| Atributo | Valor |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ DM2 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 3.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.55Ohm @ 1.75A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 8.6 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 375 pF @ 100 V |
| PowerDissipation(Max) | 45W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Visão Geral
Description
The STD5N60DM2 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for electronic applications requiring efficient power management and switching. It is part of STMicroelectronics' MDmesh DM2 series, known for high efficiency and performance in power conversion applications. The "5N60" denotes its specifications: it can handle a drain current of 5A and a drain-source voltage of 600V.
Key features include low on-state resistance, which minimizes power loss and heat generation, making it suitable for high-efficiency designs. The MOSFET is tailored for hard-switching configurations in power supplies, lighting systems, and motor control. Its fast switching speed and robust avalanche characteristics enhance reliability and performance in demanding conditions.
The STD5N60DM2 is commonly used in applications such as SMPS (Switched-Mode Power Supplies), lighting drivers, and industrial power control systems. Its compact package allows for integration into space-constrained designs, enhancing versatility and application scope.
Key features include low on-state resistance, which minimizes power loss and heat generation, making it suitable for high-efficiency designs. The MOSFET is tailored for hard-switching configurations in power supplies, lighting systems, and motor control. Its fast switching speed and robust avalanche characteristics enhance reliability and performance in demanding conditions.
The STD5N60DM2 is commonly used in applications such as SMPS (Switched-Mode Power Supplies), lighting drivers, and industrial power control systems. Its compact package allows for integration into space-constrained designs, enhancing versatility and application scope.
Equivalent
The STD5N60DM2 is a N-channel MOSFET commonly used in power applications. Equivalent products include:
1. IRF530N by Infineon Technologies
2. FDL100N50F by ON Semiconductor
3. STP5NK60Z by STMicroelectronics
4. FQP4N60 by Fairchild Semiconductor
5. 2SK2837 by Toshiba
These equivalents have similar electrical characteristics but may differ slightly in parameters like Rds(on), Vgs(th), and packaging. Always check the datasheet for specific application suitability.
1. IRF530N by Infineon Technologies
2. FDL100N50F by ON Semiconductor
3. STP5NK60Z by STMicroelectronics
4. FQP4N60 by Fairchild Semiconductor
5. 2SK2837 by Toshiba
These equivalents have similar electrical characteristics but may differ slightly in parameters like Rds(on), Vgs(th), and packaging. Always check the datasheet for specific application suitability.
Features
The STD5N60DM2 is an N-channel Power MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 600V, making it suitable for high-voltage applications.
2. Current Capacity: The device supports a continuous drain current (I_D) of 5A at 25°C.
3. Low On-Resistance: It features low on-state resistance (R_DS(on)) to minimize power losses, thereby improving efficiency.
4. Fast Switching: The MOSFET offers fast switching speeds, which are crucial for high-frequency applications.
5. Package Type: It is available in a DPAK package, providing a compact form factor ideal for space-constrained designs.
6. Enhanced Performance: The device is designed for robustness and reliability, with low gate charge (Q_g) to facilitate easier driving and reduced power consumption.
7. Applications: It is commonly used in applications such as power supplies, lighting, and motor control.
These features make the STD5N60DM2 a versatile choice for designers looking for a reliable and efficient MOSFET for their high-voltage, high-power applications.
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 600V, making it suitable for high-voltage applications.
2. Current Capacity: The device supports a continuous drain current (I_D) of 5A at 25°C.
3. Low On-Resistance: It features low on-state resistance (R_DS(on)) to minimize power losses, thereby improving efficiency.
4. Fast Switching: The MOSFET offers fast switching speeds, which are crucial for high-frequency applications.
5. Package Type: It is available in a DPAK package, providing a compact form factor ideal for space-constrained designs.
6. Enhanced Performance: The device is designed for robustness and reliability, with low gate charge (Q_g) to facilitate easier driving and reduced power consumption.
7. Applications: It is commonly used in applications such as power supplies, lighting, and motor control.
These features make the STD5N60DM2 a versatile choice for designers looking for a reliable and efficient MOSFET for their high-voltage, high-power applications.
Pinout
The STD5N60DM2 is an N-channel MOSFET. It typically comes in a DPAK package, which has three pins and a tab. Here’s a concise breakdown of its pin configuration and function:
1. Pin Count:
- 3 Pins + Tab: The package includes three primary pins and a metal tab used for heat dissipation.
2. Pin Function:
- Gate (G): This is the control terminal that modulates the conductivity of the MOSFET. Applying a voltage to this pin allows control of the current flow between the drain and source.
- Drain (D): This pin is where the current flows into the MOSFET. It is connected to the load within the circuit.
- Source (S): This pin is where the current flows out of the MOSFET back to ground or a common reference point.
- Tab: Electrically connected to the drain and used for thermal management by attaching to a heatsink to dissipate heat effectively.
The STD5N60DM2 is commonly used in power applications due to its high voltage and current handling capabilities.
1. Pin Count:
- 3 Pins + Tab: The package includes three primary pins and a metal tab used for heat dissipation.
2. Pin Function:
- Gate (G): This is the control terminal that modulates the conductivity of the MOSFET. Applying a voltage to this pin allows control of the current flow between the drain and source.
- Drain (D): This pin is where the current flows into the MOSFET. It is connected to the load within the circuit.
- Source (S): This pin is where the current flows out of the MOSFET back to ground or a common reference point.
- Tab: Electrically connected to the drain and used for thermal management by attaching to a heatsink to dissipate heat effectively.
The STD5N60DM2 is commonly used in power applications due to its high voltage and current handling capabilities.
Manufacturer
The STD5N60DM2 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products. It serves a variety of industries, including automotive, industrial, personal electronics, and communications equipment. The company is known for its contributions to several technological advancements and offers solutions in areas such as microcontrollers, sensors, power management, and digital integrated circuits.
Application
The STD5N60DM2 is a Power MOSFET transistor, commonly used in applications that require efficient power management and switching. Its application areas include:
1. Switching Power Supplies: Used in AC-DC converters and DC-DC converters for efficient energy conversion.
2. Motor Drives: Employed in driving motors with precise control, commonly found in industrial and consumer electronic applications.
3. Lighting: Utilized in LED drivers for efficient and reliable lighting solutions.
4. Inverters: Used in solar inverters and other inverter-based systems for converting DC to AC power.
5. Telecommunications: Applied in power amplification and distribution within telecom infrastructure.
These applications benefit from its high efficiency, fast switching, and low on-state resistance.
1. Switching Power Supplies: Used in AC-DC converters and DC-DC converters for efficient energy conversion.
2. Motor Drives: Employed in driving motors with precise control, commonly found in industrial and consumer electronic applications.
3. Lighting: Utilized in LED drivers for efficient and reliable lighting solutions.
4. Inverters: Used in solar inverters and other inverter-based systems for converting DC to AC power.
5. Telecommunications: Applied in power amplification and distribution within telecom infrastructure.
These applications benefit from its high efficiency, fast switching, and low on-state resistance.
Package
The STD5N60DM2 is a power MOSFET that comes in a DPAK package. This is a surface-mount, plastic package designed for high-power and high-speed switching applications.
