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STF21N65M5
+Lista de MateriaisMOSFET N-CH 650V 17A TO220FP
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STF21N65M5
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Especificações
| Atributo | Valor |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 17A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 190mOhm @ 8.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 50 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1950 pF @ 100 V |
| PowerDissipation(Max) | 30W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
Visão Geral
Description
STF21N65M5 is STMicroelectronics’ high‑voltage N‑channel power MOSFET (STF family). It is designed for switching in offline power applications such as SMPS, adapters, chargers, and motor drives. Key points:
- VDS: 650 V; ID: about 21 A (continuous).
- Features rugged switching, avalanche robustness, and a moderate gate charge for efficient drive.
- Gate drive: typically needs around 10 V to reach low RDS(on); threshold is roughly 2–4 V.
- Packages: available in common power packages (e.g., TO‑220, D²PAK) for through‑hole or surface mounting with adequate heat sinking.
- For exact RDS(on), gate charge, safe operating area, and package options, consult the official datasheet.
If you’re designing a topology (buck, boost, flyback, LLC), verify the precise specs from the datasheet and ensure proper heatsinking and gate drive.
- VDS: 650 V; ID: about 21 A (continuous).
- Features rugged switching, avalanche robustness, and a moderate gate charge for efficient drive.
- Gate drive: typically needs around 10 V to reach low RDS(on); threshold is roughly 2–4 V.
- Packages: available in common power packages (e.g., TO‑220, D²PAK) for through‑hole or surface mounting with adequate heat sinking.
- For exact RDS(on), gate charge, safe operating area, and package options, consult the official datasheet.
If you’re designing a topology (buck, boost, flyback, LLC), verify the precise specs from the datasheet and ensure proper heatsinking and gate drive.
Features
Here are the main features of STF21N65M5 (STMicroelectronics):
- N-channel enhancement-mode power MOSFET
- VDS: 650 V
- ID (continuous): ~21 A
- RDS(on): roughly 1.0–1.6 Ω (depends on package and temperature; typical at VGS = 10 V)
- Gate threshold (VGS(th)): ~2–4 V; VGS rating ±20 V; drive voltage typically 10 V recommended
- Fast switching characteristics with low gate charge and suitable capacitances
- Avalanche energy ruggedness for inductive-load protection
- Applications: high-voltage switch-mode power supplies, PFC, offline converters, motor drives
- Packages: TO-220, D²PAK (TO-263), DPAK (TO-252); RoHS compliant
Note: Always verify exact figures from the datasheet for the specific package and lot, as RDS(on) and parameters vary with temperature and part variant.
- N-channel enhancement-mode power MOSFET
- VDS: 650 V
- ID (continuous): ~21 A
- RDS(on): roughly 1.0–1.6 Ω (depends on package and temperature; typical at VGS = 10 V)
- Gate threshold (VGS(th)): ~2–4 V; VGS rating ±20 V; drive voltage typically 10 V recommended
- Fast switching characteristics with low gate charge and suitable capacitances
- Avalanche energy ruggedness for inductive-load protection
- Applications: high-voltage switch-mode power supplies, PFC, offline converters, motor drives
- Packages: TO-220, D²PAK (TO-263), DPAK (TO-252); RoHS compliant
Note: Always verify exact figures from the datasheet for the specific package and lot, as RDS(on) and parameters vary with temperature and part variant.
Pinout
- Pin count: 3 (Gate, Drain, Source)
- Function: N-channel enhancement-mode power MOSFET used as a high-voltage switch in power electronics (e.g., power supplies, inverters).
- Function: N-channel enhancement-mode power MOSFET used as a high-voltage switch in power electronics (e.g., power supplies, inverters).
Manufacturer
STMicroelectronics (STMicro) is the manufacturer. It is a European multinational semiconductor company headquartered near Geneva, Switzerland. STMicro designs, manufactures, and markets a wide range of semiconductor products—including power MOSFETs, sensors, microcontrollers, and analog/digital ICs—for automotive, industrial, communications, and consumer electronics.
Application
STF21N65M5 is a high-voltage N-channel power MOSFET (about 650 V). Common application areas include:
- Switch-mode power supplies (PFC stages, primary-side switching) and DC-DC converters
- AC-DC front ends and telecom/industrial power supplies
- Solar/wower renewable inverters and UPS systems
- Motor drives and variable-speed control
- Battery chargers and grid-tied power interfaces
Used wherever high-voltage switching and efficient power conversion are required.
- Switch-mode power supplies (PFC stages, primary-side switching) and DC-DC converters
- AC-DC front ends and telecom/industrial power supplies
- Solar/wower renewable inverters and UPS systems
- Motor drives and variable-speed control
- Battery chargers and grid-tied power interfaces
Used wherever high-voltage switching and efficient power conversion are required.
Package
STF21N65M5 is a ST STripFET II N-channel MOSFET in a D²PAK (TO-263) surface-mount package.
