STFU18N65M2

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STFU18N65M2

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MOSFET N-CH 650V 12A TO220FP

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Especificações

Atributo Valor
Supplier STMicroelectronics
Package Tube
Series MDmesh™ M2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 330mOhm @ 6A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 20 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 770 pF @ 100 V
PowerDissipation(Max) 25W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220FP

Visão Geral

Description

STFU18N65M2 is an N-channel enhancement-mode power MOSFET from STMicroelectronics, designed for high-voltage switching in power electronics. It’s part of ST’s 650 V family and is suitable for switch-mode power supplies, motor drives, inverters, and offline converters.
Key points:
- Voltage/current: about 650 V maximum drain-source voltage; current rating in the tens of amps (roughly 18 A class, package/cooling dependent).
- Gate drive: typically 10–12 V drive; Vgs max ±20 V.
- Features: rugged fast body diode, intended for efficient high-speed switching; built on ST’s high-voltage MOSFET technology.
- Packages: available in multiple packages (e.g., TO-220, D²PAK, etc.).
- Design note: check the datasheet for exact values (Rds(on), Qgs/Qgd, thermal resistance) and ensure proper heatsinking.
For precise specs and reflow/thermal guidelines, consult the latest datasheet.

Equivalent

STFU18N65M2 is a 650 V N‑channel power MOSFET. Equivalent choices are other 650 V N‑channel MOSFETs with similar RDS(on), ID and package/pinout — for example ST’s STW18NM65M2, Vishay’s SiHF18N65 variants, ON Semiconductor’s NTD18N65 family, or Infineon 650 V MOSFETs. Always verify VDS, ID, RDS(on), package and thermal limits against the datasheet before substituting.

Pinout

Pin count: 3 pins (G, D, S) with the tab tied to Drain.
Function: N-channel enhancement-mode power MOSFET (STMicroelectronics STFU18N65M2) used for high-voltage switching. Pinout (typical): pin 1 = Gate, pin 2 = Drain, pin 3 = Source; tab = Drain.

Manufacturer

- Manufacturer: STMicroelectronics (ST)
- What kind of company: A multinational electronics and semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor devices (power MOSFETs, IGBTs, MEMS sensors, microcontrollers, analog/digital ICs), headquartered in Geneva, Switzerland.

Application

High-voltage, high-speed N-channel MOSFET. Applications include:
- Primary switch in offline SMPS (PFC stages, flyback/forward/LLC topologies)
- DC-DC converters in telecom and industrial power supplies
- Solar inverters and battery storage systems
- UPS/inverter topologies
- Motor drives and general high-voltage switching where a 650 V device is needed (industrial equipment, power tools)
Simple and concise.

Package

D‑PAK (TO‑263) surface‑mount package.

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