STGD10HF60KD

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STGD10HF60KD

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IGBT 600V 10A DPAK

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Especificações

Atributo Valor
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 18 A
Current-CollectorPulsed(Icm) 30 A
Vce(on)(Max)@VgeIc 2.75V @ 15V, 5A
Power-Max 62.5 W
SwitchingEnergy 45µJ (on), 105µJ (off)
InputType Standard
GateCharge 23 nC
Td(on/off)@25°C 9.5ns/87ns
TestCondition 400V, 5A, 10Ohm, 15V
ReverseRecoveryTime(trr) 50 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Visão Geral

Description

The STGD10HF60KD is a type of power semiconductor device, specifically an Insulated Gate Bipolar Transistor (IGBT), which is commonly used in a variety of electronic applications. IGBTs are known for their efficiency and fast switching capabilities, making them suitable for high-voltage and high-current applications such as motor drives, inverters, and power supply circuits.
The STGD10HF60KD model is characterized by its high-frequency operation, low on-state voltage drop, and high-speed saturation voltage. It features a 600V blocking voltage and a current rating of 10A, allowing it to handle substantial power loads. The device is designed to offer high energy efficiency and robust performance even in demanding environments.
Manufactured by STMicroelectronics, the STGD10HF60KD is built with advanced technologies to ensure reliability and longevity. It typically comes in a TO-220 package, which provides effective heat dissipation and easy integration into electronic circuits. Its compact size and efficient performance make it a popular choice for designers looking to optimize the efficiency of their power circuits.

Equivalent

The STGD10HF60KD is a 600V, 10A Insulated Gate Bipolar Transistor (IGBT) with a fast recovery diode. Equivalent products may include:
1. Infineon IKW10N60H3 - Similar voltage and current ratings.
2. Fairchild FGA10N60UFD - Comparable specifications and fast recovery diode.
3. ON Semiconductor NGD8201B - Matching voltage and current capabilities.
4. Mitsubishi CM10TF-12H - Offers similar parameters for comparable applications.
Always verify specifications to ensure compatibility in your specific application.

Features

The STGD10HF60KD is a high-performance silicon-controlled rectifier (SCR) from STMicroelectronics. It is designed for use in a variety of applications, including motor control, industrial heating, and AC/DC conversion. Key features include:
1. Voltage Rating: It has a high voltage capability, typically around 600V, making it suitable for medium to high-voltage applications.
2. Current Rating: The device can handle a maximum on-state current of approximately 10A, allowing it to manage substantial loads.
3. Gate Triggering: It features a sensitive gate triggering mechanism, which facilitates easy control and efficient operation.
4. Thermal Management: The device is designed with efficient heat dissipation in mind, often requiring additional heat sinks for optimal performance.
5. Robust Design: It includes protections against over-current and voltage spikes, enhancing reliability.
6. Package Type: The SCR is typically available in a TO-220 package, which is convenient for mounting and thermal management.
These features make the STGD10HF60KD a versatile component for various power management and control systems.

Pinout

The STGD10HF60KD is an IGBT (Insulated Gate Bipolar Transistor) device designed for use in various applications such as motor drives and inverters. It comes in a DPAK package, which is a type of surface-mount package. This IGBT has three pins, which are typically assigned as follows:
1. Collector (C): This is one of the main terminals between which current flows when the device is turned on.
2. Gate (G): This terminal is used to control the switching of the IGBT. Applying a voltage to the gate enables the device to conduct between the collector and emitter.
3. Emitter (E): This is the terminal through which current exits the IGBT when it is conducting.
The STGD10HF60KD is characterized by features like high-speed switching, low on-state voltage drop, and robust thermal performance, making it suitable for efficient power management in electronic devices.

Manufacturer

The STGD10HF60KD is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. The company serves various industries, including automotive, industrial, personal electronics, and communication equipment. STMicroelectronics is known for its innovative solutions in areas such as microcontrollers, power management, sensors, and analog devices. Its products are integral to the advancement of technology in numerous applications.

Application

The STGD10HF60KD is an IGBT (Insulated Gate Bipolar Transistor) commonly used in applications requiring efficient and robust power switching. Its applications include:
1. Inverters: Used in solar inverters, motor drives, and uninterruptible power supplies (UPS).
2. Motor Control: Suitable for controlling motors in industrial and consumer applications.
3. Power Converters: Used in DC-DC and AC-DC converters.
4. Switch-Mode Power Supplies (SMPS): Ensures efficient power conversion in various electronic devices.
5. Welding Equipment: Provides efficient control in welding machines.
6. Lighting: Used in electronic ballasts and LED drivers for efficient lighting control.
These areas benefit from the IGBT's high efficiency, fast switching, and thermal stability.

Package

The STGD10HF60KD is an IGBT (Insulated Gate Bipolar Transistor) in a TO-220 package. The TO-220 is a type of package commonly used for power semiconductors, featuring a metal tab for heat dissipation and three leads for electrical connections.

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