STGW30NC60KD

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STGW30NC60KD

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IGBT 600V 60A TO-247-3

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Especificações

Atributo Valor
Series PowerMESH™
Part Status Active
Base Product Number STGW30
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 125 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A
Power - Max 200 W
Switching Energy 350µJ (on), 435µJ (off)
Input Type Standard
Gate Charge 96 nC
Td (on/off) @ 25°C 29ns/120ns
Test Condition 480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 40 ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package TO-247-3
Supplier Device Package TO-247-3
Packaging Tube

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Description

The STGW30NC60KD is a power transistor, specifically an IGBT (Insulated Gate Bipolar Transistor), designed by STMicroelectronics. It combines the high-efficiency and fast-switching characteristics of a power MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor. This makes it ideal for applications requiring high efficiency and performance, such as motor drives, inverters, and power converters.
Key specifications include a collector-emitter voltage (V_CES) of 600V and a continuous collector current (I_C) of 30A, making it suitable for medium to high-power applications. The device also features a low on-state voltage drop, ensuring reduced power losses and improved overall system efficiency. Additionally, it is designed with a fast switching speed and a short-circuit withstand capability, enhancing its reliability and robustness in demanding environments.
The STGW30NC60KD is available in a TO-247 package, providing efficient heat dissipation through its large mounting surface, which is crucial for maintaining performance under high-power conditions.

Equivalent

The STGW30NC60KD is a 600V, 30A IGBT. Equivalent products include the IRG4BC30W from Infineon, the FGA30S120M from ON Semiconductor, and the APT30GA60BD15 from Microsemi. These components share similar voltage and current ratings, making them suitable substitutes in various power electronic applications. Always verify the specifications and application requirements to ensure compatibility.

Features

The STGW30NC60KD is a power transistor from STMicroelectronics featuring the following key characteristics:
1. IGBT Technology: This component is an Insulated Gate Bipolar Transistor (IGBT), combining the easy drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors.
2. Voltage and Current Ratings: It is designed to handle a collector-emitter voltage (V_ce) of up to 600V and a continuous collector current (I_c) of 60A.
3. Low Saturation Voltage: The transistor offers low on-state voltage drop, which enhances efficiency by reducing the power loss during conduction.
4. Switching Speed: It provides fast switching capabilities, making it suitable for high-frequency applications.
5. Package: The STGW30NC60KD is commonly available in a TO-247 package, providing robust durability and effective heat dissipation.
6. Applications: It is typically used in applications such as motor drives, power inverters, and other high-power industrial applications.
These features make the STGW30NC60KD a versatile choice for efficient power management in demanding environments.

Pinout

The STGW30NC60KD is an Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. It is designed for high-speed switching applications. The device comes in a TO-247 package, which typically features three pins. The pin configuration and functions are as follows:
1. Collector (C): This is the terminal through which the main current enters the IGBT from the connected external circuit. It is responsible for collecting the charge carriers.
2. Gate (G): This is the control terminal used to turn the IGBT on or off. A voltage applied to the gate controls the conductivity of the device.
3. Emitter (E): This is the terminal through which the current exits the IGBT. It serves as the reference point for the gate voltage.
The STGW30NC60KD is designed to handle high voltages and currents, making it suitable for applications like motor drives, power supplies, and inverters.

Manufacturer

The STGW30NC60KD is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. The company operates in various segments, including automotive, industrial, personal electronics, and communications equipment. It is known for its innovation in the development of microcontrollers, power applications, sensors, and other electronic components. STMicroelectronics serves a diverse customer base worldwide and is recognized for its contributions to technology and electronics across multiple industries.

Application

The STGW30NC60KD is a power transistor, specifically an IGBT (Insulated Gate Bipolar Transistor), widely used in applications requiring high efficiency and fast switching. Its primary application areas include:
1. Motor Drives: Used in controlling electric motors in industrial and consumer applications.
2. Power Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
3. Switching Power Supplies: Helps in efficient power management and conversion.
4. Welding Equipment: Used in high-frequency welding applications due to its robustness.
5. Lighting Systems: Employed in electronic ballasts for fluorescent and HID lamps.
These applications benefit from the IGBT's ability to handle high voltages and currents while maintaining energy efficiency.

Package

The STGW30NC60KD is an Insulated Gate Bipolar Transistor (IGBT) with a TO-247 package type.

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