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STGW40H120F2
+Lista de MateriaisIGBT 1200V 40A HS TO-247
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STGW40H120F2
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Pacote TO-247-3
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Especificações
| Atributo | Valor |
| Supplier | STMicroelectronics |
| Package | Tube |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 1200 V |
| Current-Collector(Ic)(Max) | 80 A |
| Current-CollectorPulsed(Icm) | 160 A |
| Vce(on)(Max)@VgeIc | 2.6V @ 15V, 40A |
| Power-Max | 468 W |
| SwitchingEnergy | 1mJ (on), 1.32mJ (off) |
| InputType | Standard |
| GateCharge | 158 nC |
| Td(on/off)@25°C | 18ns/152ns |
| TestCondition | 600V, 40A, 10Ohm, 15V |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
Visão Geral
Description
Key points:
- Rating: up to 1200 V blocking, about 40 A continuous current (module level)
- Configuration: dual IGBT with anti-parallel diodes (half-bridge)
- Packaging: compact module designed for heatsinking with electrical isolation between case and terminals
- Applications: motor drives, renewable energy inverters, power supplies, DC/DC inverters
- Drive/thermal: requires appropriate IGBT gate drive and cooling; specs depend on package variant and cooling method
Why choose it: combines high voltage capability with integrated switching devices in a single, relatively compact module, simplifying BOM and layout for high‑power converters.
For exact electrical characteristics (gate threshold, switching speeds, SOA, thermal data, pinout) and mounting/drive recommendations, consult the official ST datasheet and application notes.
Equivalent
Features
- 1200 V blocking voltage
- 40 A per IGBT (dual IGBT, two channels)
- Integrated fast-recovery diodes
- Trench-gate IGBT technology for improved switching and lower losses
- Two IGBT/diode pairs in one package (suitable for half-bridge configurations)
- Isolated baseplate for easy heatsinking and mounting
- Optimized low stray inductance for high-speed switching
- Compact module intended for motor drives, inverters, PFC and power supplies
Note: consult the datasheet for exact electrical ratings (tSC, VCE(sat), gating, thermal specs) and pinout before design.
Pinout
Function: STGW40H120F2 is a high-voltage (≈1200 V), high-current (≈40 A) N-channel IGBT with an intrinsic anti-parallel diode, used for switching in power-electronics applications.
Manufacturer
What kind of company: STMicroelectronics is a multinational integrated semiconductor manufacturer (IDM). It designs, develops and manufactures a broad range of semiconductor products—power devices (including IGBT modules like the STGW40H120F2), discrete components, analog and mixed-signal ICs, microcontrollers, sensors and more—for automotive, industrial, consumer and communications markets. Headquarters are in Geneva, Switzerland, with global design and manufacturing operations.
Application
- Three-phase motor drives and servo drives
- Solar and other renewable-energy inverters (grid-tied or off-grid)
- Uninterruptible power supplies (UPS) and other power supplies
- Welding machines and induction heating equipment
- Traction/inverter drives for rail or heavy-duty uses
- General high-power switch-mode power supplies (DC-DC, DC-AC) in industrial equipment