STGW40V60DF

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STGW40V60DF

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IGBT 600V 80A 283W TO247

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Especificações

Atributo Valor
Package Tube
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 160 A
Vce(on)(Max)@VgeIc 2.3V @ 15V, 40A
Power-Max 283 W
SwitchingEnergy 456µJ (on), 411µJ (off)
InputType Standard
GateCharge 226 nC
Td(on/off)@25°C 52ns/208ns
TestCondition 400V, 40A, 10Ohm, 15V
ReverseRecoveryTime(trr) 41 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Visão Geral

Description

The STGW40V60DF is a silicon power transistor designed for use in high-power switching applications. Manufactured by STMicroelectronics, it is part of their range of insulated gate bipolar transistors (IGBTs) optimized for high-speed operations. The device features a collector-emitter voltage (V_CE) rating of 600V, making it suitable for applications requiring high voltage handling capabilities.
Key characteristics of the STGW40V60DF include a continuous collector current of 40A, a fast switching speed, and a low saturation voltage, which enhances energy efficiency by reducing power losses during operation. The device is also designed to operate at high frequencies, which is ideal for modern electronic systems that require rapid switching.
The transistor is typically used in applications such as motor drives, power inverters, and induction heating systems, where efficient and reliable power management is crucial. The DF suffix in its part number indicates a specific packaging style, which is optimized for thermal performance, ensuring better heat dissipation during operation.

Equivalent

The STGW40V60DF is a 600V, 40A IGBT. Some equivalent products include:
1. Fairchild FGH40N60UFD
2. Infineon IKW40N60H3
3. ON Semiconductor FGA40N60UFD
4. Mitsubishi CM40TF-12H
Ensure compatibility by checking the specific requirements such as voltage, current ratings, and package type.

Features

The STGW40V60DF is an IGBT (Insulated Gate Bipolar Transistor) device designed for high-efficiency and fast-switching applications. Here are its key features:
1. Voltage and Current Ratings: Typically supports a collector-emitter voltage of around 600V and a continuous collector current of approximately 40A.
2. Switching Speed: Optimized for fast switching to reduce power losses, making it suitable for high-frequency applications.
3. Low Saturation Voltage: Features a low V_CE(sat) which enhances efficiency by reducing conduction losses.
4. Integrated Fast Recovery Diode: Comes with a built-in anti-parallel diode for efficient operation in inverter and motor drive circuits.
5. Robust Construction: Designed to handle high temperatures and provides a good thermal performance, often packaged with a TO-247 outline to facilitate heat dissipation.
6. Applications: Commonly used in power converters, induction heating, motor control, and welding equipment due to its ability to handle high power levels efficiently.
These attributes make the STGW40V60DF a robust choice for demanding electronic applications requiring reliable and efficient power switching.

Pinout

The STGW40V60DF is an insulated gate bipolar transistor (IGBT) designed for high-speed switching applications. It is typically used in power management and control applications and is recognized for its efficiency and reliability.
Regarding its pin count, the STGW40V60DF is housed in a TO-247 package, which generally features three pins. These pins are conventionally labeled as the collector (C), gate (G), and emitter (E):
1. Collector (C): This pin is connected to the power supply and serves as the input for the current flow.
2. Gate (G): This pin is used to control the IGBT. By applying voltage here, the IGBT can be switched on or off.
3. Emitter (E): This pin serves as the output for the current flow, completing the circuit through the load.
The primary function of this IGBT is to act as a switch, allowing for the rapid control of high power in applications such as motor drives, inverters, and power supplies.

Manufacturer

The STGW40V60DF is manufactured by STMicroelectronics. STMicroelectronics is a leading global semiconductor company that designs, develops, manufactures, and markets a broad range of products, including discrete devices, integrated circuits, and microcontrollers. The company is known for its innovation and focus on developing technology solutions that enable smarter, more sustainable applications across various industries such as automotive, industrial, personal electronics, and communications equipment. Founded in 1987 through the merger of several semiconductor companies, STMicroelectronics has grown to become a prominent player in the semiconductor industry, with operations and research facilities worldwide.

Application

The STGW40V60DF is a dual fast-recovery epitaxial diode (FRED) commonly used in applications requiring efficient and reliable rectification. Its primary areas include:
1. Power Supplies: Utilized in AC/DC converters and SMPS (Switch Mode Power Supplies) for improved efficiency and reduced losses.
2. Motor Drives: Supports motor control systems by providing fast switching and reducing power dissipation.
3. Welding Equipment: Enhances performance in welding machines by ensuring stable and efficient power delivery.
4. PFC Circuits: Used in Power Factor Correction circuits to improve the power factor of electrical systems.
5. UPS Systems: Integral in Uninterruptible Power Supplies for delivering consistent power output.

Package

The STGW40V60DF is an IGBT (Insulated Gate Bipolar Transistor) designed by STMicroelectronics. It typically comes in a TO-247 package, which is a through-hole type known for its capability to handle high power levels, making it suitable for various applications like motor drives and induction heating.

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