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STH310N10F7-2
+Lista de MateriaisMOSFET N-CH 100V 180A H2PAK-2
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STH310N10F7-2
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Ficha Técnica STH310N10F7-2 DataSheet
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Pacote TO-263-3
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | DeepGATE™, STripFET™ VII |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.5mOhm @ 60A, 10V |
| Vgs(th)(Max)@Id | 3.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 180 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 12800 pF @ 25 V |
| PowerDissipation(Max) | 315W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | H2Pak-2 |
Visão Geral
Description
Key features of the STH310N10F7-2 include low on-resistance (R_DS(on)), which reduces conduction losses, and a fast switching speed, contributing to improved efficiency and thermal performance. The device is typically housed in a TO-220 package, ensuring ease of mounting and effective heat dissipation. Moreover, it includes a fast recovery diode, enhancing its performance in hard-switching conditions. Engineers opt for this MOSFET in designs requiring robust and reliable performance, particularly where high power density and efficiency are critical. It is ideal for use in both consumer electronics and industrial applications.
Equivalent
1. Infineon IRFP7530
2. ON Semiconductor FDP047N10A
3. Vishay Siliconix SiHP33N10D
4. Toshiba TK100E10N1
When selecting an equivalent, ensure that the voltage, current ratings, package type, and other critical parameters match the application requirements. Always consult the datasheet for detailed specifications to ensure compatibility.
Features
1. N-channel MOSFET: It is an N-channel type, which is typically used for high-efficiency switching.
2. Voltage and Current Ratings: This component can handle significant amounts of voltage and current, making it suitable for high-power applications.
3. Low On-Resistance: It features a low on-resistance, which minimizes energy loss and heat generation, improving efficiency.
4. Fast Switching: This MOSFET is designed for fast switching, which makes it ideal for high-frequency applications.
5. Robust Design: The device is built to withstand harsh conditions, including high temperatures and voltages, ensuring reliability.
6. Enhanced Performance: It may feature advanced technology that enhances its performance over traditional MOSFETs.
These features make the STH310N10F7-2 suitable for use in automotive applications, power supplies, and industrial systems where efficient power management is crucial.
Pinout
- Pin Count: The PowerFLAT 8x8 package typically has 8 pins. However, the exact number and configuration can vary slightly based on the specific design and application within the PowerFLAT category.
- Function: As a MOSFET, it serves as an electronic switch or amplifier. The STH310N10F7-2 is designed for high efficiency and fast switching, making it suitable for applications like DC-DC converters, motor drivers, and other power management systems. It offers low on-resistance and can handle high current and voltage levels, making it ideal for high-performance and power-sensitive applications.
For precise pin configuration and more detailed specifications, referring to the manufacturer's datasheet is recommended.
Manufacturer
Application
1. Power Supply Units: Utilized in both AC-DC and DC-DC converters for efficient power management.
2. Motor Control: Employed in electric motor drives for industrial and consumer applications due to its low on-resistance.
3. Automotive Systems: Used in electric vehicle power management and onboard charging systems.
4. Renewable Energy: Incorporated in solar inverters and wind turbine converters for energy conversion.
5. Telecommunications: Supports efficient power amplification and management in telecom equipment.
Its attributes make it suitable for high-frequency applications where efficiency and thermal performance are critical.