STN1NK80Z

Imagens apenas para referência

STN1NK80Z

+Lista de Materiais

MOSFET N-CH 800V 250MA SOT223

365 Garantia de Qualidade em 1 dia

7*24 Garantia de serviço em 24 horas

90-Garantia de pós-venda em 1 dia

Garantia de Produto Genuíno

Especificações

Atributo Valor
Package Tape & Reel (TR),Cut Tape (CT)
Series SuperMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 250mA (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 16Ohm @ 500mA, 10V
Vgs(th)(Max)@Id 4.5V @ 50µA
GateCharge(Qg)(Max)@Vgs 7.7 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 160 pF @ 25 V
PowerDissipation(Max) 2.5W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-223

Visão Geral

Description

The STN1NK80Z is an N-channel power MOSFET designed for high-voltage applications. Key features include:
- Voltage Rating: 800V, suitable for high-voltage circuits.
- Current Handling: Up to 1A (continuous drain current).
- Low On-Resistance (RDS(on)): ~10Ω (typical), improving efficiency.
- Fast Switching: Optimized for power supply and switching applications.
- Package: TO-252 (DPAK), offering good thermal performance.
Commonly used in AC-DC converters, offline power supplies, and motor control, it provides reliable performance in demanding environments. Always refer to the datasheet for detailed specifications and application guidelines.

Equivalent

Equivalent products to the STN1NK80Z (N-channel MOSFET, 800V, 1A) include:
- STP1NK80Z (similar specs, TO-220 package)
- IRF820 (500V, 2.5A, common alternative)
- 2N7000 (60V, 0.2A, for lower voltage)
- STW1NK80 (higher power variant)
Check datasheets for exact compatibility in your circuit.

Features

The STN1NK80Z is an N-channel MOSFET with the following key features:
- Voltage Rating: 800V drain-source voltage (VDSS), suitable for high-voltage applications.
- Current Rating: 1A continuous drain current (ID).
- Low On-Resistance: 12Ω (typical) at 10V gate drive (RDS(on)), reducing conduction losses.
- Fast Switching: Optimized for high-speed switching applications.
- Avalanche Energy Rated: Robust against inductive load spikes.
- Package: TO-252 (DPAK), offering good thermal performance.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
Ideal for power supplies, lighting, and motor control.

Package

The STN1NK80Z is a TO-262 (TO-262-3, I2PAK) package type. It is a surface-mount power MOSFET with three leads, designed for high-efficiency switching applications. The package offers good thermal performance and is commonly used in power supplies and motor control circuits.

Produtos relacionados a STN1NK80Z

  • Orçamento Rápido

  • Envie sua solicitação de orçamento para STN1NK80Z Use este formulário. Responderemos em até 12 horas.