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STP100N6F7
+Lista de MateriaisMOSFET N-CH 60V 100A TO220
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STP100N6F7
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Pacote TO-220-3
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Especificações
| Atributo | Valor |
| Package | Tube |
| Series | STripFET™ F7 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 5.6mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 30 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1980 pF @ 25 V |
| PowerDissipation(Max) | 125W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Visão Geral
Description
- Voltage Rating: 60V
- Current Rating: 100A (continuous)
- Low On-Resistance (RDS(on)): 1.7mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-speed operation
- Package: TO-220FP (isolated tab for better thermal management)
Ideal for DC-DC converters, motor control, and power switching in automotive, industrial, and consumer electronics. Its low RDS(on) minimizes conduction losses, improving efficiency.
For detailed specs, refer to the datasheet.
Equivalent
1. IRFP260N by Infineon Technologies
2. FDP039N06 by ON Semiconductor
3. IXFH64N10 by IXYS Corporation
4. NTMFS5C604NL by ON Semiconductor
These equivalents are based on similar voltage, current ratings, and functionality. Always check the datasheet to ensure compatibility with your specific application.
Features
1. N-channel MOSFET: This device is based on STMicroelectronics' advanced Power MOS technology, providing efficient switching capabilities.
2. Voltage and Current Ratings: It offers a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 100A, making it suitable for high-power applications.
3. Low On-Resistance: The device features very low on-state resistance (R_DS(on)), which minimizes power loss during operation, enhancing efficiency.
4. Fast Switching: It is designed for high-speed switching, which is crucial for applications requiring rapid transitions.
5. Enhanced Robustness: The MOSFET includes avalanche ruggedness and a low gate charge, which improves its reliability under stress and makes it easier to drive.
6. Package Type: The STP100N6F7 typically comes in a TO-220 package, which allows for easy mounting and cooling.
These features make it ideal for use in power supply circuits, motor control, and other applications that demand efficient power management.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate terminal allows current to flow between the drain and source terminals, effectively turning the MOSFET "on" or "off."
2. Drain (D): This is the terminal through which the main current flows when the MOSFET is turned on. The current flows from the drain to the source in an N-channel MOSFET like the STP100N6F7.
3. Source (S): This pin is the return path for the current flowing through the drain. In an N-channel MOSFET, the source is typically connected to ground or a negative voltage relative to the drain.
The STP100N6F7 is designed for high-performance applications requiring efficient power management and is often used in power supplies, motor control, and other power conversion systems.
Manufacturer
Application
1. Power Supplies: Utilized in both AC-DC and DC-DC converters for efficient voltage regulation.
2. Motor Control: Employed in motor drivers for automotive and industrial applications due to high current handling.
3. Battery Management: Used in battery protection circuits and charging systems.
4. Inverters: Suitable for use in solar inverters and uninterruptible power supplies (UPS).
5. Lighting Systems: Applied in LED drivers and ballast for energy-efficient lighting solutions.
6. Telecommunications: Used in base station power amplifiers and networking equipment.
These applications leverage its low on-resistance and fast switching capabilities for improved performance and energy efficiency.