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STP13NM60N
+Lista de MateriaisMOSFET N-CH 600V 11A TO220-3
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STP13NM60N
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Ficha Técnica STP13NM60N DataSheet
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Especificações
| Atributo | Valor |
| Series | MDmesh™ II |
| Part Status | Active |
| Base Product Number | STP13 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V |
| Power Dissipation (Max) | 90W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package | TO-220-3 |
| Packaging | Tube |
Visão Geral
Description
Key features include fast switching, high avalanche ruggedness, and low gate charge, which enhance its efficiency and reliability in various environments. The STP13NM60N is typically used in applications like power supplies, motor control, and lighting systems, where efficient power conversion is crucial. Its TO-220 package allows for easy mounting and heat dissipation, contributing to its robust performance. Overall, the STP13NM60N is a versatile component for engineers looking to optimize energy usage and improve the reliability of electronic devices.
Equivalent
1. IRFP260N (International Rectifier)
2. FDP18N50 (Fairchild Semiconductor)
3. FQA13N50C (Fairchild Semiconductor)
4. NTP18N50 (ON Semiconductor)
5. IXFH10N60P (IXYS)
These equivalents may vary slightly in specifications, so it's important to compare parameters like voltage rating, current rating, and RDS(on) to ensure compatibility with your application.
Features
1. Voltage and Current Ratings:
- Drain-Source Voltage (V_DS): 600V
- Continuous Drain Current (I_D): 11A at 25°C
2. On-Resistance:
- Low R_DS(on): Typically around 0.4 Ohms, which contributes to reduced power loss and increased efficiency.
3. Gate Characteristics:
- Gate Threshold Voltage: 2-4V
- Gate charge is optimized for efficient switching, enhancing performance in fast-switching scenarios.
4. Package Type:
- TO-220 package, which is commonly used for ease of mounting and thermal management.
5. Temperature and Thermal Management:
- Maximum Operating Junction Temperature: 150°C
- Equipped with features to manage power dissipation effectively, ensuring reliability.
6. Applications:
- Suitable for use in power supply circuits, motor control, and other applications requiring efficient voltage regulation and switching.
Its robust construction and high-voltage capability make the STP13NM60N a reliable choice for both industrial and consumer electronics.
Pinout
1. Gate (G): This pin controls the operation of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): Current flows into the drain from the load when the MOSFET is in the 'on' state.
3. Source (S): Current flows out from the source to ground or the negative side of the supply.
This MOSFET is used in various applications, including power switching and amplification, due to its high voltage (600V) and current capabilities (approximately 13A). The STP13NM60N is commonly utilized in power management and conversion circuits.
Manufacturer
Application
1. Power Supplies: Utilized in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Drives: Employed in driving motors for industrial and consumer appliances.
3. Lighting Systems: Used in LED lighting systems for efficient power management.
4. Inverters: Suitable for DC-AC inverters in renewable energy systems like solar inverters.
5. DC-DC Converters: Ideal for voltage regulation and conversion in various electronic devices.
6. Telecommunications: Applied in systems requiring reliable power switching.
Its high voltage and current handling capabilities make it versatile for these applications.