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STP22NM60N
+Lista de MateriaisMOSFET N-CH 600V 16A TO220AB
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STP22NM60N
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Ficha Técnica STP22NM60N DataSheet
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Pacote TO-220-3
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Especificações
| Atributo | Valor |
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 16A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 220mOhm @ 8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 44 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1300 pF @ 50 V |
| PowerDissipation(Max) | 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Visão Geral
Description
This MOSFET is commonly used in power converters, lighting systems, and motor drive applications due to its ability to handle high voltages and currents efficiently. It features a low gate charge and fast switching times, enhancing overall performance and efficiency in electronic designs. Additionally, the STP22NM60N is available in a TO-220 package, which provides a good balance between heat dissipation and compact size. Overall, this component is valued for its robustness, reliability, and ability to improve the performance of power management systems.
Equivalent
1. IRF640 - Fairchild/ON Semiconductor, with similar voltage and current ratings.
2. NTP6416 - ON Semiconductor, featuring a similar voltage rating.
3. IPP60R199CP - Infineon, comparable in voltage and current.
Ensure to verify the exact specifications and ratings like Rds(on), gate charge, and package type to ensure compatibility in your specific application.
Features
1. Voltage and Current Ratings:
- Drain-Source Voltage (V_DS): 600V
- Continuous Drain Current (I_D): 22A
2. On-Resistance:
- Low R_DS(on) value of 0.18 ohms, ensuring lower conduction losses.
3. Technology:
- Based on MDmesh™ technology, which enhances performance with fast switching and lower gate charge.
4. Performance:
- High-speed switching capability, optimizing efficiency in power circuits.
- Improved dv/dt ruggedness, increasing reliability in dynamic operations.
5. Package:
- Available in a TO-220 package, which is well-suited for through-hole mounting and effective heat dissipation.
6. Applications:
- Ideal for use in switching power supplies, AC-DC converters, and other applications requiring efficient power management.
These features make the STP22NM60N a robust choice for power management in various electronic systems.
Pinout
1. Gate (G): This pin is used to control the MOSFET's conduction state. When a suitable voltage is applied to the gate, it allows the flow of current between the drain and source.
2. Drain (D): The drain is the pin through which the current enters the MOSFET when it is in the on state. It is typically connected to the load in a circuit.
3. Source (S): The source is the pin through which the current exits the MOSFET. It is usually connected to the ground or negative supply.
The STP22NM60N is used in applications requiring high-speed switching due to its low on-resistance and fast switching capabilities. Common applications include power supplies, motor control, and other power management systems.
Manufacturer
Application
1. Power Supply Systems: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Suitable for driving motors in applications like industrial automation and consumer electronics.
3. Lighting: Utilized in LED drivers and other lighting control systems.
4. Inverters: Applied in DC-AC inverter circuits for renewable energy systems.
5. Battery Management: Used in battery protection and charging systems.
Its high voltage and current-handling capabilities make it appropriate for use in demanding environments.