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STP34NM60N
+Lista de MateriaisMOSFET N-CH 600V 29A TO220-3
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STP34NM60N
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Ficha Técnica STP34NM60N DataSheet
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Pacote TO-220
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Em Estoque6177
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Especificações
| Atributo | Valor |
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 29A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 105mOhm @ 14.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 80 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2722 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Visão Geral
Description
Key specifications include a maximum current rating of 34A, which allows it to handle substantial power loads. The STP34NM60N is encapsulated in a TO-220 package, facilitating easy mounting and efficient heat dissipation. Its low on-state resistance (R_DS(on)) ensures minimal power loss, contributing to higher efficiency in power circuits.
The device is often used in applications such as power supplies, motor control, and other industrial systems where robustness and reliability are critical. Its construction also provides excellent thermal performance and ruggedness, making it a reliable choice for engineers working on demanding projects.
Equivalent
1. IRFP460 by Vishay/IR
2. FQA34N60 by Fairchild Semiconductor (now ON Semiconductor)
3. IPP60R190C6 by Infineon Technologies
4. FDP18N50 by ON Semiconductor
It's essential to compare the specific electrical characteristics and ratings like voltage, current, and Rds(on) to ensure compatibility with your application. Always refer to the datasheets for precise matching.
Features
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 600V, making it suitable for high-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of 34A at 25°C, allowing for substantial power handling.
3. R_DS(on): The typical on-resistance is low, around 0.07 ohms, which minimizes power loss and heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is typically 3V, ensuring easy operation with low drive voltage.
5. Package: It is available in a TO-220 package, which provides efficient heat dissipation and ease of mounting.
6. Applications: The STP34NM60N is ideal for use in power supplies, motor controllers, and converters due to its high voltage and current handling capabilities.
These features make the STP34NM60N a versatile choice for various power electronics applications.
Pinout
1. Gate (G): This is the control pin that modulates the flow of current between the drain and source. Applying a voltage to the gate pin allows current to flow from the drain to the source.
2. Drain (D): This pin is the terminal through which the main current flows from the source when the MOSFET is in the 'on' state.
3. Source (S): This pin is the terminal that connects to the source of the current that flows through the drain when the MOSFET is activated.
The STP34NM60N is used in various applications such as power supplies, amplifiers, and other electronic circuits for switching and amplification purposes, thanks to its high voltage and current handling capabilities.
Manufacturer
Application
1. Switching Power Supplies: Used in converters and power regulators for efficient power management.
2. Motor Drives: Employed in motor control circuits for industrial and consumer applications.
3. Lighting Systems: Utilized in high-efficiency lighting controls and LED drivers.
4. Inverters: Suitable for DC to AC conversion in solar inverters and UPS systems.
5. Audio Amplifiers: Applied in high-power audio amplification circuits for improved sound quality.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.