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STP3NK60Z
+Lista de MateriaisMOSFET N-CH 600V 2.4A TO220AB
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STP3NK60Z
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Especificações
| Atributo | Valor |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 2.4A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.6Ohm @ 1.2A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 11.8 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 311 pF @ 25 V |
| PowerDissipation(Max) | 45W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Visão Geral
Description
STP3NK60Z is STMicroelectronics’ 600 V N-channel enhancement-mode power MOSFET. It’s designed for high-voltage switching in power electronics (offline SMPS, inverters, motor drives, etc.). The device offers robust switching performance and is available in common power packages (for example TO-220 and D²PAK); the drain tab is typically connected to the package heat sink. For exact current rating, on-resistance, gate-threshold, gate charge, thermal limits, and packaging options, refer to the STP3NK60Z datasheet. If you’re selecting it for a design, check the datasheet specs and app notes to match your voltage, current, and thermal requirements.
Equivalent
Common equivalents to the STP3NK60Z are other 600 V N‑channel power MOSFETs with similar ID and RDS(on), for example: STW3NK60Z (ST), MTP3N60E (ON Semiconductor), FQPF3N60C (Fairchild), IXFH3N60 (IXYS/Infineon), and AOD3N60 (Alpha & Omega). Always verify VDS, ID, RDS(on), package and switching specs on datasheets before substituting.
Features
STP3NK60Z is a 600 V, N-channel MOSFET. Key features:
- 600 V blocking voltage; N-channel enhancement mode
- Continuous drain current: ~3 A
- RDS(on): approximately 1.5–2.0 Ω (typical range; check datasheet for exact values at VGS = 10 V)
- Avalanche rugged with specified EAS for surge protection
- Fast switching capability; suitable for SMPS, inverters, and motor drives
- Built-in body diode; good dv/dt and di/dt performance
- Packaging: through-hole TO-220AB (and related surface-mount variants in ST lineups); RoHS Pb-free
- General purpose power MOSFET designed for robust thermal and electrical performance
Note: For exact RDS(on), gate threshold, packaging, and test conditions, please consult the official datasheet.
- 600 V blocking voltage; N-channel enhancement mode
- Continuous drain current: ~3 A
- RDS(on): approximately 1.5–2.0 Ω (typical range; check datasheet for exact values at VGS = 10 V)
- Avalanche rugged with specified EAS for surge protection
- Fast switching capability; suitable for SMPS, inverters, and motor drives
- Built-in body diode; good dv/dt and di/dt performance
- Packaging: through-hole TO-220AB (and related surface-mount variants in ST lineups); RoHS Pb-free
- General purpose power MOSFET designed for robust thermal and electrical performance
Note: For exact RDS(on), gate threshold, packaging, and test conditions, please consult the official datasheet.
Pinout
Pin count: 3 pins (plus tab). Pinout: 1 = Gate, 2 = Drain, 3 = Source; tab is connected to Drain.
Function: N-channel enhancement-mode power MOSFET (high-voltage switch) used in power electronics (e.g., SMPS, motor drives) with Drain connected to the tab.
Function: N-channel enhancement-mode power MOSFET (high-voltage switch) used in power electronics (e.g., SMPS, motor drives) with Drain connected to the tab.
Manufacturer
Manufacturer: STMicroelectronics (brand ST).
What kind of company: STMicroelectronics is a multinational semiconductor manufacturer headquartered in Geneva, Switzerland (with major operations in France and Italy). It designs and produces a broad range of semiconductor products — including power MOSFETs (like the STP3NK60Z), microcontrollers, analog and mixed‑signal ICs, sensors and power-management devices — serving automotive, industrial, consumer and communications markets.
What kind of company: STMicroelectronics is a multinational semiconductor manufacturer headquartered in Geneva, Switzerland (with major operations in France and Italy). It designs and produces a broad range of semiconductor products — including power MOSFETs (like the STP3NK60Z), microcontrollers, analog and mixed‑signal ICs, sensors and power-management devices — serving automotive, industrial, consumer and communications markets.
Application
STP3NK60Z is a 600V N-channel MOSFET. Common application areas include:
- Offline switch-mode power supplies (flyback, boost, PFC front ends)
- High-voltage DC-DC converters and inverter front ends
- Motor drives and PWM switching for small/medium DC motors, BLDCs, and steppers
- Solar inverters, UPS, and grid-tied inverter systems
- General high-voltage switching in industrial equipment, power tools, and consumer appliances
Note: suitable where a 600V, low-to-medium current switching device is required.
- Offline switch-mode power supplies (flyback, boost, PFC front ends)
- High-voltage DC-DC converters and inverter front ends
- Motor drives and PWM switching for small/medium DC motors, BLDCs, and steppers
- Solar inverters, UPS, and grid-tied inverter systems
- General high-voltage switching in industrial equipment, power tools, and consumer appliances
Note: suitable where a 600V, low-to-medium current switching device is required.
Package
The STP3NK60Z is an N‑channel 600 V MOSFET supplied in a DPAK (TO‑252) surface‑mount package.
