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STP3NK80Z
+Lista de MateriaisMOSFET N-CH 800V 2.5A TO220AB
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STP3NK80Z
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Ficha Técnica STP3NK80Z DataSheet
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Especificações
| Atributo | Valor |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 2.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.5Ohm @ 1.25A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 485 pF @ 25 V |
| PowerDissipation(Max) | 70W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Visão Geral
Description
The STP3NK80Z is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a high voltage capability, typically around 800V, making it suitable for use in high-voltage circuits. The device is part of STMicroelectronics' MDmesh series, known for its low on-state resistance and high-speed switching performance, which contribute to reducing power losses and improving efficiency in power conversion systems.
The STP3NK80Z is commonly used in applications like power supplies, converters, and other power management systems, where its characteristics help minimize energy loss and enhance overall system performance. It is packaged in a TO-220 form factor, allowing for efficient heat dissipation, and it is designed to handle significant power in a compact size, which is crucial for modern electronic devices that demand both performance and space efficiency. Its robust design also ensures reliability and longevity in various operating conditions.
The STP3NK80Z is commonly used in applications like power supplies, converters, and other power management systems, where its characteristics help minimize energy loss and enhance overall system performance. It is packaged in a TO-220 form factor, allowing for efficient heat dissipation, and it is designed to handle significant power in a compact size, which is crucial for modern electronic devices that demand both performance and space efficiency. Its robust design also ensures reliability and longevity in various operating conditions.
Equivalent
The STP3NK80Z is an N-channel MOSFET from STMicroelectronics. Equivalent products are those with similar specifications, such as:
1. IRF840 - by International Rectifier
2. NTE2987 - by NTE Electronics
3. FQA8N80C - by Fairchild Semiconductor
4. TK8A80E - by Toshiba
Ensure to verify the specifications like Vds, Id, Rds(on), and package type for compatibility in your application.
1. IRF840 - by International Rectifier
2. NTE2987 - by NTE Electronics
3. FQA8N80C - by Fairchild Semiconductor
4. TK8A80E - by Toshiba
Ensure to verify the specifications like Vds, Id, Rds(on), and package type for compatibility in your application.
Features
The STP3NK80Z is an N-channel Power MOSFET manufactured by STMicroelectronics. Key features include:
1. VDSS (Drain-Source Voltage): Rated at 800V, suitable for high-voltage applications.
2. RDS(on) (On-Resistance): Low on-state resistance of approximately 3.6Ω, improving efficiency by reducing power loss during operation.
3. ID (Drain Current): Can handle a continuous drain current of up to 3A, making it suitable for moderate power applications.
4. Package Type: Commonly available in TO-220 package, offering good thermal performance.
5. Enhanced Avalanche Ruggedness: It can withstand high-energy pulses in avalanche mode, providing reliability in demanding conditions.
6. Applications: Ideal for use in switching applications like power supplies, motor drives, and lighting systems.
7. Low Gate Charge: Features a low gate charge (Qg), ensuring efficient switching and low driving power requirements.
These features make the STP3NK80Z suitable for various power management applications, particularly where high voltage and moderate current handling are required.
1. VDSS (Drain-Source Voltage): Rated at 800V, suitable for high-voltage applications.
2. RDS(on) (On-Resistance): Low on-state resistance of approximately 3.6Ω, improving efficiency by reducing power loss during operation.
3. ID (Drain Current): Can handle a continuous drain current of up to 3A, making it suitable for moderate power applications.
4. Package Type: Commonly available in TO-220 package, offering good thermal performance.
5. Enhanced Avalanche Ruggedness: It can withstand high-energy pulses in avalanche mode, providing reliability in demanding conditions.
6. Applications: Ideal for use in switching applications like power supplies, motor drives, and lighting systems.
7. Low Gate Charge: Features a low gate charge (Qg), ensuring efficient switching and low driving power requirements.
These features make the STP3NK80Z suitable for various power management applications, particularly where high voltage and moderate current handling are required.
Pinout
The STP3NK80Z is an N-channel MOSFET from STMicroelectronics. It typically comes in a TO-220 package, which has three pins. These pins are:
1. Gate (G): This pin is responsible for turning the MOSFET on and off. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): Current flows from the drain to the source when the MOSFET is on. It is the pin through which the output current enters the device.
3. Source (S): The source is the pin through which current exits the device. It is typically connected to the ground or the negative side of the power supply.
The STP3NK80Z is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V, and is used in power switching applications. It offers low gate charge and is efficient for use in various circuits, including power supplies and converters.
1. Gate (G): This pin is responsible for turning the MOSFET on and off. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): Current flows from the drain to the source when the MOSFET is on. It is the pin through which the output current enters the device.
3. Source (S): The source is the pin through which current exits the device. It is typically connected to the ground or the negative side of the power supply.
The STP3NK80Z is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V, and is used in power switching applications. It offers low gate charge and is efficient for use in various circuits, including power supplies and converters.
Manufacturer
The STP3NK80Z is manufactured by STMicroelectronics. STMicroelectronics is a multinational company that specializes in the design, development, and manufacture of a broad range of semiconductor and microelectronics solutions. It operates in various sectors, including automotive, industrial, personal electronics, and communications equipment. The company is known for its innovation in creating integrated circuits and discrete devices that are essential components in a wide array of electronic systems. Founded in 1987 through the merger of Italian and French semiconductor companies, STMicroelectronics is one of the leading players in the global semiconductor industry.
Application
The STP3NK80Z is a high-voltage N-channel MOSFET designed for various applications. Its primary use cases include:
1. Switching Power Supplies: Efficient in managing power conversion processes.
2. Motor Control: Suitable for driving motors in various industrial and consumer applications.
3. Lighting Systems: Ideal for LED drivers and other lighting control systems.
4. Inverters: Used in renewable energy systems like solar inverters.
5. Adapters and Chargers: Provides reliable switching for power adapters and battery chargers.
Its high voltage and current handling capabilities make it versatile for applications that require efficient power management and control.
1. Switching Power Supplies: Efficient in managing power conversion processes.
2. Motor Control: Suitable for driving motors in various industrial and consumer applications.
3. Lighting Systems: Ideal for LED drivers and other lighting control systems.
4. Inverters: Used in renewable energy systems like solar inverters.
5. Adapters and Chargers: Provides reliable switching for power adapters and battery chargers.
Its high voltage and current handling capabilities make it versatile for applications that require efficient power management and control.
Package
The STP3NK80Z is a power MOSFET with an N-channel configuration. It comes in a TO-220 package type, which is commonly used for power semiconductors due to its ability to handle higher power levels and provide efficient heat dissipation with the use of a heat sink.
