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STP40NF10
+Lista de MateriaisMOSFET N-CH 100V 50A TO220AB
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STP40NF10
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Ficha Técnica STP40NF10 DataSheet
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Pacote TO-220-3
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Especificações
| Atributo | Valor |
| Package / Case | Tube |
| Series | STripFET™ II |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 50A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 28mOhm @ 25A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 62 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2180 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
Visão Geral
Description
Key specifications include:
- Drain-Source Voltage (V_DS): 100V
- Continuous Drain Current (I_D): 40A
- On-Resistance (R_DS(on)): Approximately 23 mΩ, which indicates low power loss during operation.
- Gate Threshold Voltage (V_GS(th)): 2 to 4V, which specifies the voltage required to turn the device on.
The STP40NF10 is built with advanced trench technology, providing improved efficiency and thermal performance. Its TO-220 package allows for effective heat dissipation, essential for high-power scenarios. Applications typically involve power supplies, motor drives, and DC-DC converters. It offers high-speed switching, low gate charge, and robust avalanche performance, making it a versatile component in electronic design.
Equivalent
1. IRF1010 from International Rectifier
2. FQP50N10 from ON Semiconductor
3. FDP20N10 from Fairchild Semiconductor
4. RFP50N10 from Renesas Electronics
These alternatives offer similar voltage, current characteristics, and package type. Always verify specifications to ensure compatibility with your specific application requirements.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 40A.
2. R_DS(on): Offers a low on-resistance, typically around 23 mΩ, enhancing efficiency by minimizing power loss through the device.
3. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, making it relatively easy to drive with standard logic levels.
4. Package: Available in a TO-220 package, which is widely used and allows for efficient heat dissipation through a heatsink.
5. Temperature Range: The device operates within a junction temperature range of -55°C to 175°C, suitable for various environments.
6. Fast Switching: It is designed for high-speed switching applications, making it ideal for use in power supplies and motor control circuits.
These features make the STP40NF10 a versatile choice for use in power management applications, including DC-DC converters, load switches, and other electronic devices requiring efficient switching.
Pinout
1. Gate (G): This is the control pin, used to turn the MOSFET on or off by applying the appropriate voltage.
2. Drain (D): This pin is the output connection where the main current flows when the MOSFET is turned on.
3. Source (S): This pin is the input connection where the current enters the MOSFET before flowing to the drain.
The STP40NF10 is used in applications involving high-speed switching and power management due to its ability to handle significant current and voltage levels efficiently.
Manufacturer
Application
1. Power Supplies: Used in AC/DC converters and DC/DC converters for efficient power regulation.
2. Motor Control: Employed in motor drivers for industrial and automotive applications.
3. Lighting Systems: Utilized in LED drivers and other lighting control systems.
4. Battery Management: Used in battery protection circuits and charging systems.
5. Inverters: Applicable in solar inverters and uninterruptible power supplies (UPS).
6. Audio Amplifiers: Implemented in high-power audio amplification systems.
Its high-speed switching and low on-resistance make it suitable for these applications.