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STW10NK80Z
+Lista de MateriaisMOSFET N-CH 800V 9A TO247-3
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STW10NK80Z
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Ficha Técnica STW10NK80Z DataSheet
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Pacote TO-247-3
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Especificações
| Atributo | Valor |
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 9A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 900mOhm @ 4.5A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 72 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 2180 pF @ 25 V |
| PowerDissipation(Max) | 160W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Visão Geral
Description
Key features include low gate charge, high-speed switching capability, and robust avalanche performance, making it suitable for switching power supplies, power factor correction, and lighting applications. The device is housed in a TO-247 package, which allows for better thermal management due to its larger surface area for heat dissipation.
Overall, the STW10NK80Z offers reliability and performance in demanding high-voltage environments, making it a popular choice for engineers designing power electronic systems.
Equivalent
1. IRF840 from Vishay
2. FQP6N80 from Fairchild Semiconductor/ON Semiconductor
3. NTE2973 from NTE Electronics
4. FDP5N80 from Fairchild Semiconductor/ON Semiconductor
Ensure to cross-reference datasheets for compatibility in terms of voltage, current, and power ratings.
Features
1. Drain-Source Voltage (V_DS): Rated up to 800V, making it suitable for high voltage applications.
2. Continuous Drain Current (I_D): Capable of handling up to 8.5A, allowing it to manage moderate power levels.
3. On-State Resistance (R_DS(on)): Low R_DS(on) of approximately 0.85 ohms, ensuring efficient current flow and reduced power loss.
4. Fast Switching Speed: Its design supports high-speed operations, beneficial for switching converters and power supplies.
5. Zener-Protected: Integrated Zener diode for enhanced ESD protection and greater reliability.
6. Package Type: Available in a TO-247 package, which provides effective heat dissipation and ease of mounting.
7. Applications: Commonly used in SMPS, motor control, lighting circuits, and other power management applications.
These features make the STW10NK80Z a versatile and efficient choice for designers working with high voltage and high current systems.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): The drain is the terminal through which the main current enters the MOSFET.
3. Source (S): The source is the terminal through which the main current exits the MOSFET.
This device is designed for high voltage and high power applications, with a voltage rating of 800V and a current rating of 10A. It is often used in power supply, motor control, and other high-efficiency applications due to its low on-resistance and fast switching capabilities.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Used in power supplies for improved efficiency and compact design.
2. Power Factor Correction (PFC): Enhances power factor in electronic devices.
3. Motor Control: Suitable for driving motors in industrial and consumer electronics.
4. Lighting: Used in LED drivers and electronic ballasts for high-efficiency lighting solutions.
5. Inverters: Employed in various inverter systems, including solar inverters and UPS systems.
6. Telecommunication Equipment: Ensures efficient power management in telecom networks.
These applications leverage the MOSFET's high voltage capacity and efficiency.