STW11NK100Z

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STW11NK100Z

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MOSFET N-CH 1000V 8.3A TO247-3

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Especificações

Atributo Valor
Package Tube
Series SuperMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1000 V
Current-ContinuousDrain(Id)@25°C 8.3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.38Ohm @ 4.15A, 10V
Vgs(th)(Max)@Id 4.5V @ 100µA
GateCharge(Qg)(Max)@Vgs 162 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 3500 pF @ 25 V
PowerDissipation(Max) 230W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

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Description

The STW11NK100Z is an N-channel Power MOSFET from STMicroelectronics, designed for high-voltage applications.
### Key Features:
- Voltage Rating: 1000V (drain-source)
- Current Rating: 11A (continuous drain current)
- Low On-Resistance (RDS(on)): 0.45Ω (typ.)
- Fast Switching: Suitable for high-efficiency power circuits
- Package: TO-247 (robust thermal performance)
### Applications:
- Switching Power Supplies (SMPS)
- Motor Control
- Inverters & Industrial Power Systems
### Advantages:
- High voltage capability with low conduction losses
- Good thermal performance due to TO-247 package
Ideal for high-power, high-voltage switching where efficiency and reliability are critical.

Equivalent

Equivalent products to the STW11NK100Z (1000V, 11A, N-channel MOSFET) include:
- STP11NK100Z (TO-220 package)
- STW11NK100 (similar specs, different package)
- IRFBE30 (Infineon, 800V, 12A)
- FQP11N100C (Fairchild, 1000V, 11A)
- IXFH11N100 (IXYS, 1000V, 11A)
Check datasheets for exact compatibility in your circuit.

Features

The STW11NK100Z is a N-channel MOSFET with the following key features:
- Voltage Rating: 1000V
- Current Rating: 11A (continuous)
- Low On-Resistance (RDS(on)): 0.45Ω (max)
- Fast Switching Speed: Suitable for high-frequency applications
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- Avalanche Energy Rated: Robust against inductive load spikes
- Package: TO-247 (easy mounting and heat dissipation)
Ideal for power supplies, inverters, and motor control applications.

Manufacturer

The STW11NK100Z is a power MOSFET manufactured by STMicroelectronics, a multinational semiconductor company based in Switzerland.
STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including microcontrollers, sensors, power devices, and analog ICs. The company serves industries such as automotive, industrial, consumer electronics, and IoT.
The STW11NK100Z is a high-voltage N-channel MOSFET designed for power switching applications, commonly used in power supplies, motor control, and energy-efficient systems.
STMicroelectronics is known for its innovation in energy-efficient and high-performance semiconductor technologies.

Application

The STW11NK100Z is a 1000V, 11A N-channel MOSFET, commonly used in:
1. Switching Power Supplies – High-voltage DC-DC converters, PFC circuits.
2. Motor Control – Inverters for industrial and automotive applications.
3. Lighting Systems – LED drivers and ballast controls.
4. Renewable Energy – Solar inverters and wind power systems.
5. Industrial Equipment – High-efficiency power switching in automation.
Its low on-resistance (RDS(on)) and fast switching make it suitable for high-voltage, high-efficiency applications.

Package

The STW11NK100Z is a N-channel MOSFET in a TO-247 package. This package type is robust, suitable for high-power applications, and features three leads with good thermal performance. It is commonly used in switching and amplification circuits requiring high voltage (up to 1000V) and current handling. The TO-247's design aids in efficient heat dissipation, making it ideal for demanding environments.

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