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STW13NK100Z
+Lista de MateriaisMOSFET N-CH 1000V 13A TO247-3
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STW13NK100Z
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Ficha Técnica STW13NK100Z DataSheet
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Pacote TO-247
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Especificações
| Atributo | Valor |
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1000 V |
| Current-ContinuousDrain(Id)@25°C | 13A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 700mOhm @ 6.5A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 266 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 6000 pF @ 25 V |
| PowerDissipation(Max) | 350W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Visão Geral
Description
### Key Features:
- Voltage Rating: 1000V
- Current Rating: 13A (continuous)
- Low On-Resistance (RDS(on)): 0.45Ω (typical)
- Fast Switching: Suitable for high-efficiency power converters
- Package: TO-247 (through-hole, robust thermal performance)
### Applications:
- Switched-Mode Power Supplies (SMPS)
- Motor Control
- Inverters & Industrial Power Systems
### Advantages:
- High voltage tolerance
- Low conduction losses
- Good thermal performance
Ideal for designers needing reliable high-voltage switching in power electronics.
Equivalent
- STP13NK100Z (similar specs, TO-220 package)
- IRFBE30 (1000V, 12A, TO-220)
- FQPF13N100C (1000V, 13A, TO-220F)
- IXFH13N100 (1000V, 13A, TO-247)
Check datasheets for exact compatibility in your circuit.
Features
- Voltage Rating: 1000V (high-voltage capability)
- Current Rating: 13A (continuous drain current)
- Low On-Resistance: 0.45Ω (typical @ 10V VGS)
- Fast Switching: Optimized for high-speed applications
- Low Gate Charge: Enhances efficiency in switching circuits
- Avalanche Energy Rated: Robust against inductive load spikes
- Package: TO-247 (good thermal performance)
- Applications: Power supplies, inverters, motor drives, and industrial systems
This MOSFET is designed for high-voltage, high-efficiency switching with strong thermal and electrical performance.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- 1000V drain-source voltage (VDS).
- 13A continuous drain current (ID).
- Low on-resistance (RDS(on)).
- Suitable for high-voltage switching (e.g., power supplies, inverters).
This MOSFET is commonly used in SMPS, motor drives, and industrial applications.
Manufacturer
STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including microcontrollers, sensors, power management ICs, and discrete components like MOSFETs. The company serves industries such as automotive, industrial, consumer electronics, and IoT.
The STW13NK100Z is a high-voltage N-channel MOSFET designed for power switching applications, offering low on-resistance and high efficiency. STMicroelectronics is known for its reliable and innovative semiconductor technologies.
Application
1. Switching Power Supplies – High-voltage DC-DC converters, SMPS.
2. Motor Control – Inverters for industrial and automotive applications.
3. Lighting Systems – LED drivers and ballast controls.
4. Renewable Energy – Solar inverters and power management.
5. Industrial Applications – High-efficiency switching circuits.
Its low on-resistance (RDS(on)) and fast switching make it suitable for high-power, high-frequency designs.
