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STW20N95K5
+Lista de MateriaisMOSFET N-CH 950V 17.5A TO247-3
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STW20N95K5
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Ficha Técnica STW20N95K5 DataSheet
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Pacote TO-247-3
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Especificações
| Atributo | Valor |
| Package | Tube |
| Series | SuperMESH5™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 950 V |
| Current-ContinuousDrain(Id)@25°C | 17.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 330mOhm @ 9A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 40 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1500 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Visão Geral
Description
This MOSFET is built using ST's proprietary MDmesh™ K5 technology, which optimizes it for fast switching and reduced gate charge, further improving efficiency and thermal performance. The package options, like the TO-247, provide excellent thermal dissipation capabilities, supporting higher power levels without excessive heat buildup.
The STW20N95K5 is often used in applications such as power supplies, inverters, and motor drives, where high reliability and efficiency are crucial. Its robust construction and advanced technology make it a preferred choice for designers seeking to optimize performance in demanding electrical environments.
Equivalent
1. IRFP4668 - by Infineon
2. FQA28N50 - by ON Semiconductor
3. FDB045AN08A0 - by Fairchild (ON Semiconductor)
4. IXFH48N60Q - by IXYS
When choosing an equivalent, ensure the specifications match your application's requirements like voltage rating, current capacity, and thermal characteristics.
Features
1. Voltage & Current Ratings: It has a drain-source voltage (V_DS) of 950V and a continuous drain current (I_D) of 17A, making it suitable for high-voltage applications.
2. R_DS(on): The on-resistance is low, typically around 0.195 ohms, which enhances efficiency by reducing conduction losses.
3. Fast Switching: It supports fast switching speeds, beneficial for high-frequency operations, contributing to improved performance in switching applications.
4. Power Dissipation: The device can dissipate up to 300 Watts, ensuring reliable operation under thermal stress.
5. Package: It is available in a TO-247 package, which provides excellent thermal characteristics and easy integration into designs.
6. Applications: Ideal for use in power supplies, converters, motor control, and other high-efficiency power management systems.
These features make the STW20N95K5 suitable for demanding applications that require high efficiency and reliability.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is where the main current flows out when the MOSFET is in the "on" state. It is connected to the load in the circuit.
3. Source (S): This is the return path for the current flowing through the drain. It is usually connected to the ground or the negative side of the power supply.
The STW20N95K5 is designed for high-voltage applications, capable of handling a drain-source voltage of up to 950V. It is commonly used in power supply, motor control, and other high-power applications.
Manufacturer
Application
1. Power Supply Units (PSUs): Utilized in switched-mode power supplies for improved efficiency.
2. Motor Control: Used in driving motors in industrial and automotive applications.
3. Inverters: Suitable for DC-AC conversion systems, such as solar inverters.
4. Lighting: Applied in LED and HID lighting systems for stable power management.
5. Uninterruptible Power Supplies (UPS): Ensures efficient power conversion and management.
6. Telecommunications: Used in equipment requiring reliable power handling.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.