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STW24N60M2
+Lista de MateriaisMOSFET N-CH 600V 18A TO247
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STW24N60M2
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Ficha Técnica STW24N60M2 DataSheet
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Pacote TO-247-3
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Especificações
| Atributo | Valor |
| Package | Tube |
| Series | MDmesh™ II Plus |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 190mOhm @ 9A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 29 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1060 pF @ 100 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Visão Geral
Description
The STW24N60M2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from STMicroelectronics. It is part of the MDmesh™ M2 series known for high efficiency and performance, particularly in applications where energy efficiency is crucial. This N-channel MOSFET is rated for a maximum drain-source voltage (V_ds) of 600V and a continuous drain current (I_d) of 24A.
Key features include a low on-state resistance (R_ds(on)), which minimizes conduction losses, and a high-speed intrinsic diode, enhancing efficiency in switching applications. The device is typically used in power supplies, converters, and other high-frequency power switching applications due to its fast switching capabilities and robust design. It also offers high dv/dt capability and good avalanche characteristics, making it reliable under tough operating conditions.
The STW24N60M2 is encapsulated in a TO-247 package, which supports efficient thermal management, allowing it to handle higher power levels with an appropriate heatsink. Overall, it is designed for efficiency and reliability in demanding power electronics applications.
Key features include a low on-state resistance (R_ds(on)), which minimizes conduction losses, and a high-speed intrinsic diode, enhancing efficiency in switching applications. The device is typically used in power supplies, converters, and other high-frequency power switching applications due to its fast switching capabilities and robust design. It also offers high dv/dt capability and good avalanche characteristics, making it reliable under tough operating conditions.
The STW24N60M2 is encapsulated in a TO-247 package, which supports efficient thermal management, allowing it to handle higher power levels with an appropriate heatsink. Overall, it is designed for efficiency and reliability in demanding power electronics applications.
Equivalent
The STW24N60M2 is a 600V, 24A N-channel MOSFET. Equivalent products include:
1. IRFP460 - 500V, 20A N-channel MOSFET.
2. STP24N60DM2 - Similar specs with slightly different package.
3. IXFH24N60Q - 600V, 24A N-channel MOSFET.
4. FDPF24N60NT - 600V, 24A N-channel MOSFET from ON Semiconductor.
Ensure to verify specific electrical characteristics and package compatibility for your application.
1. IRFP460 - 500V, 20A N-channel MOSFET.
2. STP24N60DM2 - Similar specs with slightly different package.
3. IXFH24N60Q - 600V, 24A N-channel MOSFET.
4. FDPF24N60NT - 600V, 24A N-channel MOSFET from ON Semiconductor.
Ensure to verify specific electrical characteristics and package compatibility for your application.
Features
The STW24N60M2 is a N-channel Power MOSFET from STMicroelectronics designed for high-efficiency power switching applications. Key features of this MOSFET include:
1. Voltage Rating: It has a drain-to-source voltage (V_DS) rating of 600V, making it suitable for high-voltage applications.
2. Current Capability: It can handle a continuous drain current (I_D) of 24A at 25°C.
3. Low On-Resistance: The device features a low R_DS(on) of 0.145 ohms, ensuring efficient operation with minimal power losses.
4. High-Speed Switching: Its design supports fast switching speeds, which is beneficial for applications requiring high-frequency operation.
5. MDmesh II Technology: This proprietary technology provides improved energy efficiency and reduced conduction losses.
6. Package Type: It is available in a TO-247 package, which offers good thermal performance and ease of mounting.
7. Applications: The STW24N60M2 is ideal for use in applications like power supplies, converters, motor drives, and other industrial systems.
These features make the STW24N60M2 a versatile and efficient choice for demanding power management solutions.
1. Voltage Rating: It has a drain-to-source voltage (V_DS) rating of 600V, making it suitable for high-voltage applications.
2. Current Capability: It can handle a continuous drain current (I_D) of 24A at 25°C.
3. Low On-Resistance: The device features a low R_DS(on) of 0.145 ohms, ensuring efficient operation with minimal power losses.
4. High-Speed Switching: Its design supports fast switching speeds, which is beneficial for applications requiring high-frequency operation.
5. MDmesh II Technology: This proprietary technology provides improved energy efficiency and reduced conduction losses.
6. Package Type: It is available in a TO-247 package, which offers good thermal performance and ease of mounting.
7. Applications: The STW24N60M2 is ideal for use in applications like power supplies, converters, motor drives, and other industrial systems.
These features make the STW24N60M2 a versatile and efficient choice for demanding power management solutions.
Pinout
The STW24N60M2 is an N-channel Power MOSFET produced by STMicroelectronics. It is primarily used for high-efficiency switching applications. The package type for the STW24N60M2 is typically TO-247, which has three pins.
Here is the pin configuration and function:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the current enters into the MOSFET. In the TO-247 package, the drain is also often connected to the back metal of the package to aid heat dissipation.
3. Source (S): This pin is the exit point for the current flowing through the MOSFET.
The STW24N60M2 is part of the MDmesh II series, designed for low on-resistance and high-speed switching, making it suitable for various power applications, including power supply, converters, and motor control systems.
Here is the pin configuration and function:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the current enters into the MOSFET. In the TO-247 package, the drain is also often connected to the back metal of the package to aid heat dissipation.
3. Source (S): This pin is the exit point for the current flowing through the MOSFET.
The STW24N60M2 is part of the MDmesh II series, designed for low on-resistance and high-speed switching, making it suitable for various power applications, including power supply, converters, and motor control systems.
Manufacturer
The STW24N60M2 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. These products are used in various applications, including automotive, industrial, personal electronics, communication equipment, and computers. The company is known for its innovation and expertise in semiconductor solutions, offering products that include microcontrollers, sensors, power and analog devices, and more. STMicroelectronics operates in multiple countries and serves a diverse customer base worldwide, contributing significantly to the technology sector.
Application
The STW24N60M2 is a power MOSFET designed for high-voltage applications. Its primary application areas include:
1. Power Supply Units (PSUs): Used in switch-mode power supplies for efficiency and reliability.
2. Motor Drives: Ideal for motor control systems in industrial and automotive applications.
3. Lighting Systems: Used in LED lighting due to efficient power handling.
4. Inverters: Suitable for use in solar inverters and other renewable energy systems.
5. Consumer Electronics: Found in high-power applications like televisions and computer power systems.
Its combination of high voltage capability and efficiency makes it versatile for various electronic and industrial applications.
1. Power Supply Units (PSUs): Used in switch-mode power supplies for efficiency and reliability.
2. Motor Drives: Ideal for motor control systems in industrial and automotive applications.
3. Lighting Systems: Used in LED lighting due to efficient power handling.
4. Inverters: Suitable for use in solar inverters and other renewable energy systems.
5. Consumer Electronics: Found in high-power applications like televisions and computer power systems.
Its combination of high voltage capability and efficiency makes it versatile for various electronic and industrial applications.
Package
The STW24N60M2 is a power MOSFET transistor by STMicroelectronics, and it comes in a TO-247 package.
