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STW35N60DM2
+Lista de MateriaisMOSFET N-CH 600V 28A TO247
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STW35N60DM2
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Pacote TO-247-3
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Em Estoque6910
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Especificações
| Atributo | Valor |
| Package / Case | Tube |
| Series | MDmesh™ DM2 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 28A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 110mOhm @ 14A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 54 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 2400 pF @ 100 V |
| Power Dissipation (Max) | 210W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
Visão Geral
Description
The STW35N60DM2 is known for its fast switching capabilities, which are crucial for minimizing switching losses in high-frequency applications. It also includes a low gate charge, further improving its efficiency and reducing drive requirements. The MOSFET is packaged in a TO-247 package, which provides effective thermal performance and ease of mounting in power systems.
Applications for this MOSFET include switch-mode power supplies, power factor correction circuits, and other high-voltage power conversion systems. The STW35N60DM2 brings the benefits of reduced energy consumption and improved system reliability, making it a preferred choice in demanding power electronics applications.
Equivalent
1. Infineon IPW60R041C6 - A 600V, N-channel MOSFET.
2. ON Semiconductor FDPF33N60NZ - A 600V, N-channel MOSFET.
3. Vishay SiHG33N60EF - A similar 600V N-channel MOSFET.
Ensure to verify specifications like current rating, Rds(on), and package type to ensure compatibility.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_ds) of 600V and a continuous drain current (I_d) of 35A, making it suitable for high-voltage applications.
2. RDS(on): The device offers low on-state resistance, enhancing efficiency and reducing power loss during operation.
3. Fast Switching: It is designed for fast switching speeds, which improves performance in switching applications and helps minimize energy loss.
4. MDmesh II technology: This technology contributes to its low on-resistance and high-speed switching capabilities, improving overall device performance.
5. Package: The STW35N60DM2 typically comes in a TO-247 package, which aids in heat dissipation and allows for efficient thermal management.
6. Applications: It's ideal for use in power supplies, motor control, and various industrial applications where high efficiency and reliability are crucial.
These features make the STW35N60DM2 a versatile component in the design of power electronic systems.
Pinout
The pin count and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the current to flow between the drain and source.
2. Drain (D): This pin is the output for the current that is to be switched. It is connected to the high-voltage side of the circuit when the MOSFET is on.
3. Source (S): This pin is the return path for the current. It is typically connected to the ground or a low-voltage side of the circuit.
These pins enable the STW35N60DM2 to function effectively in various high-voltage applications, offering low on-state resistance and fast switching capabilities.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Utilized for its efficiency in converting electrical power.
2. Motor Control: Employed in inverters and motor drives for precise control and energy efficiency.
3. Lighting Applications: Used in electronic ballasts for efficient lighting solutions.
4. Renewable Energy Systems: Integrated into solar inverters and similar renewable technologies.
5. Industrial Automation: Supports automation systems requiring reliable power management.
These applications leverage its low on-state resistance and high-speed switching capabilities.