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STW50N65DM2AG
+Lista de MateriaisMOSFET N-CH 650V 28A TO247
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STW50N65DM2AG
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Especificações
| Atributo | Valor |
| Series | MDmesh™ DM2 |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 28A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 87mOhm @ 19A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 70 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 3200 pF @ 100 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
| Package/Case | TO-247-3 |
| BaseProductNumber | STW50 |
Visão Geral
Description
With a low R_DS(on) of 0.06Ω, it minimizes power loss during operation, enhancing overall efficiency. The MOSFET is optimized for fast switching, which is crucial for minimizing heat generation and improving thermal management in power electronic circuits.
The device is housed in a TO-220 package, facilitating easy heat dissipation and PCB mounting. Additionally, it has built-in gate protection features, enhancing reliability in various operational environments. Overall, the STW50N65DM2AG is an ideal choice for engineers looking for robust performance in demanding applications.
Equivalent
Features
1. Voltage Rating: 650V maximum drain-source voltage, suitable for high-voltage applications.
2. Current Rating: 50A continuous drain current, allowing for substantial load handling.
3. RDS(on): Low on-resistance (0.085Ω) minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage: 2V to 4V, enabling operation with lower gate drive voltages.
5. Thermal Performance: High junction temperature (up to 175°C) and efficient thermal dissipation.
6. Package Type: Available in TO-220 and DPAK packages, facilitating easy integration into various designs.
7. Fast Switching: High-speed switching capabilities improve overall circuit performance, suitable for applications in switch-mode power supplies and DC-DC converters.
8. Robustness: Designed with avalanche rating and built-in protection against thermal runaway.
These features make the STW50N65DM2AG ideal for industrial, automotive, and consumer electronics applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET. It connects to the load in a typical application.
3. Source (S): This is the output pin where the current exits the MOSFET, typically connected to ground or the negative side of the power supply.
The STW50N65DM2AG is designed for high-voltage applications with a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 50A. Its low on-resistance makes it suitable for power conversion and switching applications.
Manufacturer
Headquartered in Geneva, Switzerland, STMicroelectronics is known for its commitment to innovation and sustainability, focusing on technologies that enable energy efficiency, connectivity, and smart applications. The company plays a significant role in advancing the Internet of Things (IoT), automotive safety, and power management solutions, making it a key player in the global semiconductor industry. STMicroelectronics operates worldwide, serving customers in over 35 countries and employing thousands of people in research, design, and manufacturing.
Application
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient energy conversion.
2. Motor Control: Employed in motor drivers for industrial and automotive applications.
3. DC-DC Converters: Ideal for buck, boost, and buck-boost converters.
4. Inverters: Utilized in renewable energy systems and uninterruptible power supplies (UPS).
5. Lighting: Suitable for LED lighting drivers requiring high efficiency and fast switching.
Overall, it is favored for its high voltage and current capabilities, making it versatile in various electronic circuits.