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TH58BVG2S3HTAI0
+Lista de MateriaisIC FLASH 4GBIT PARALLEL 48TSOP I
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FabricanteKioxia America, Inc.
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Peça do Fabricante #TH58BVG2S3HTAI0
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Pacote TSOP-48
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Em Estoque3876
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Especificações
| Atributo | Valor |
| Package / Case | Tray |
| Series | Benand™ |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 4Gb (512M x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 25ns |
| Access Time | 25 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Visão Geral
Description
This specific model might refer to a Multi-Level Cell (MLC) NAND flash, which offers a balance between performance, endurance, and cost. MLC NAND stores two bits per cell, allowing for greater storage density compared to Single-Level Cell (SLC) NAND, which stores only one bit per cell. However, MLC typically has lower endurance and performance than SLC.
The TH58BVG2S3HTAI0 would generally be part of a larger system where it interfaces with a controller that manages data reading and writing processes, wear leveling, and error correction to ensure data integrity and longevity. As NAND technology continues to evolve, models like this are part of the ongoing improvement in flash memory capacities, speeds, and efficiencies, catering to the ever-growing demand for data storage solutions.
Equivalent
1. Micron: MT29F series (e.g., MT29F2G08ABAEAWP)
2. Samsung: K9GAG08U0E or similar models
3. SK Hynix: H27UCG8T2E5R
4. Western Digital/SanDisk: SDTNRGAMA series
These equivalents may have similar specifications but ensure compatibility by consulting datasheets and technical documentation.
Features
1. Type: It is a 3D TLC (Triple-Level Cell) NAND flash memory, which means it stores 3 bits of data per cell, offering a balance between performance and cost.
2. Capacity: This particular model typically comes in capacities that are suitable for consumer electronics, SSDs, and other storage solutions.
3. Interface: It uses a standard interface for NAND flash memory, which ensures compatibility with a wide range of devices.
4. Performance: Offers good read and write speeds suitable for consumer and industrial applications, though specifics will depend on the implementation.
5. Endurance: TLC NAND has moderate endurance, suitable for general-purpose storage needs.
6. Packaging: Available in a small form factor, allowing for integration into compact devices.
7. Use Case: Ideal for use in SSDs, smartphones, tablets, and other devices requiring reliable and cost-effective storage solutions.
Note that exact specifications may vary based on the production batch and specific model configuration.
Pinout
1. Power Supply Pins: VCC (power supply) and VSS (ground).
2. I/O Pins: These are used for data input/output operations.
3. Control Pins: Includes CLE (Command Latch Enable), ALE (Address Latch Enable), WE# (Write Enable), RE# (Read Enable), and CE# (Chip Enable).
4. R/B# (Ready/Busy): Indicates the state of the NAND device, whether it is busy or ready for the next operation.
5. WP# (Write Protect): Used to protect against accidental writes.
These pins work together to enable the reading, writing, and erasing of data stored in the NAND Flash, and they play crucial roles in the chip's operation by managing commands, addresses, and data flow. For detailed specifications, always refer to the official datasheet from the manufacturer.