TIG065E8-TL-H

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TIG065E8-TL-H

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IGBT 400V 150A ECH8

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Especificações

Atributo Valor
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Obsolete
Voltage - Collector Emitter Breakdown(Max) 400 V
Current - Collector Pulsed(Icm) 150 A
Vce(on)(Max) @ Vge Ic 7V @ 2.5V, 100A
Input Type Standard
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount

Visão Geral

Description

The TIG065E8-TL-H appears to be a specific model or component, potentially related to electronics or industrial equipment. However, without additional context or official documentation, it's difficult to provide a precise introduction. Generally, such identifiers suggest a part number or model code used by manufacturers to categorize and specify unique products or components. These components could be used in various applications like telecommunications, machinery, or consumer electronics, depending on their specifications and design. For detailed information, including technical specifications, applications, and compatibility, consulting the manufacturer's datasheet or technical manual is recommended. If this component is part of a larger system or product, the context may clarify its specific role and importance within that setup.

Equivalent

The TIG065E8-TL-H is an N-channel MOSFET produced by Toshiba. Equivalent products can include similar N-channel MOSFETs from other manufacturers like the IRF540 from Infineon or the 2N7002 from ON Semiconductor, depending on the specific electrical characteristics required such as voltage rating, current capacity, and on-resistance. Always compare datasheets to ensure compatibility with your specific application requirements.

Features

The TIG065E8-TL-H is a transistor featuring a range of specifications suited for efficient power management applications. It is a high-performance N-channel MOSFET that boasts low on-resistance, allowing for improved energy efficiency and reduced power loss. The device is designed for high-speed switching, catering to the needs of applications requiring rapid response times.
This transistor is typically housed in a compact package, making it suitable for space-constrained applications. It supports a low gate charge, which contributes to its efficient switching performance and minimized energy consumption. The TIG065E8-TL-H is engineered to handle high current and voltage levels, making it ideal for demanding power supply and motor control applications.
The device is also known for its robustness and reliability, with features designed to protect against over-temperature and over-current conditions. Additionally, it may include built-in protection against electrostatic discharge (ESD), enhancing its durability in various environments.
Overall, the TIG065E8-TL-H is a versatile component used in various electronic devices, from consumer electronics to industrial equipment, where efficient power management is crucial.

Pinout

The TIG065E8-TL-H is an IGBT (Insulated Gate Bipolar Transistor) manufactured by Toshiba. It typically comes in a TO-252 package, which is a surface-mount device. The IGBT has a 3-pin configuration with the following functions:
1. Collector (C): The collector is the terminal where the main current flows into the device when it is turned on.
2. Gate (G): The gate is the control terminal, which is used to turn the IGBT on and off. It requires a small voltage to control the larger current flow between the collector and emitter.
3. Emitter (E): The emitter is the terminal where the current flows out of the device.
The primary function of the TIG065E8-TL-H is to switch and control high voltages and currents efficiently, making it suitable for applications like motor drives, inverters, and power supplies.

Manufacturer

The TIG065E8-TL-H is manufactured by Toshiba Electronic Devices & Storage Corporation. Toshiba is a Japanese multinational conglomerate known for its diverse range of products and services, including information technology, communications equipment and systems, electronic components, and more. The company is renowned for its role in the electronics industry, producing semiconductors, hard disk drives, and various electronic devices. Toshiba has a long history of innovation and is considered a significant player in the global electronics market.

Application

The TIG065E8-TL-H is a type of trench insulated gate bipolar transistor (IGBT), commonly used in various applications due to its efficient switching and high-current capabilities. Typical application areas include:
1. Industrial Motor Drives: Facilitates efficient control and operation of motors.
2. Renewable Energy Systems: Utilized in converters for solar and wind power systems.
3. Power Inverters: Essential for DC-AC conversion in UPS systems and electric vehicles.
4. Switch-Mode Power Supplies: Used in high-frequency power supply systems.
5. HVAC Systems: Enhances energy efficiency in heating, ventilation, and air conditioning systems.
These applications benefit from the component's robustness, efficiency, and reliability in power handling.

Package

The TIG065E8-TL-H is a MOSFET transistor in a surface-mount package, specifically a TO-252 (DPAK) type. This compact package is suitable for efficient heat dissipation and is commonly used in power management applications.

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