TK17A80W

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  • FabricanteToshibaCity name (optional, probably does not need a translation)

  • Peça do Fabricante #TK17A80W

  • Ficha Técnica TK17A80W DataSheet

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Especificações

Atributo Valor
Brand Vishay Semiconductors
Product Type TVS Diodes
Subcategory TVS Diodes / ESD Suppression Diodes
Package / Case DO-218AB-2
Series SM8S_A
Number of Channels 1 Channel
Polarity Unidirectional
Working Voltage 36 V
Termination Style SMD/SMT
Clamping Voltage 58.1 V
Breakdown Voltage 40 V
Ipp - Peak Pulse Current 114 A
Pppm - Peak Pulse Power Dissipation 6.6 kW
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Qualification AEC-Q100
Pd - Power Dissipation 8 W
Tradename PAR
Unit Weight 0.091712 oz

Visão Geral

Description

The TK17A80W is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications in power conversion and switching. It is characterized by a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of around 17A, making it suitable for medium to high-power applications. This MOSFET features low on-resistance (R_DS(on)), which enhances its efficiency and reduces heat generation during operation.
Typically used in power supplies, inverter circuits, and motor drives, the TK17A80W is known for its reliability and thermal stability. Its fast switching capabilities allow for improved performance in high-frequency applications. The device is packaged in a TO-220 or similar housing, facilitating effective heat dissipation and easy integration into various power electronic systems.
Overall, the TK17A80W is a versatile component ideal for engineers looking to implement efficient power management solutions.

Equivalent

The TK17A80W is a power MOSFET from Toshiba, typically used in switching applications. Equivalent products include the STP17NM60, IRF840, and FQP17P06, which are similar N-channel MOSFETs with comparable voltage and current ratings. For exact specifications, verify parameters like Vds, Id, Rds(on), and package type to ensure compatibility. Always check the manufacturer's datasheets for detailed comparisons.

Features

The TK17A80W is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various power applications. Key features include:
1. Voltage Rating: It typically has a blocking voltage of 800V, making it suitable for high-voltage applications.
2. Current Rating: It can handle high current levels, often around 17A, ensuring robust performance in power circuits.
3. Low Switching Loss: The device is engineered for efficient switching, minimizing energy losses during operation.
4. Fast Switching Speed: It offers rapid turn-on and turn-off capabilities, which enhances overall system efficiency.
5. Thermal Performance: Designed to operate in a wide temperature range, it provides reliability in demanding environments.
6. Robust Construction: The package design ensures good thermal dissipation and mechanical stability, suitable for industrial applications.
7. Applications: Commonly used in inverters, motor drives, and power supplies.
These features make the TK17A80W ideal for use in renewable energy systems, automotive applications, and industrial drives.

Pinout

The TK17A80W is an N-channel MOSFET commonly used in power applications. It features a total of 6 pins.
The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the main current flows out of the MOSFET.
3. Source (S): This terminal is where the main current enters the MOSFET.
4. Body (B): This pin is typically internally connected to the source and is used for diode functionality in the device.
The TK17A80W is designed for high-voltage applications, with a maximum drain-source voltage rating of 800V and a continuous drain current rating of 17A. It is suitable for use in power management, switching applications, and inverters.

Manufacturer

The TK17A80W is manufactured by Toshiba, a multinational conglomerate based in Japan. Founded in 1875, Toshiba operates in various sectors, including electronics, electrical equipment, and information technology. The company is well-known for its innovations in semiconductors, storage devices, and consumer electronics.
Toshiba's semiconductor division produces a wide range of products, including power MOSFETs like the TK17A80W. This specific device is a N-channel MOSFET designed for high-voltage applications, making it suitable for various electronic devices and systems. Toshiba is recognized for its commitment to quality, technological advancement, and sustainability in its manufacturing processes.
In addition to its semiconductor operations, Toshiba is involved in infrastructure, digital solutions, and energy systems, reflecting its diverse portfolio and global reach. The company's focus on innovation has positioned it as a leader in both consumer and industrial markets.

Application

The TK17A80W is an 800V N-channel MOSFET primarily used in various application areas such as:
1. Power Supply: For switching power supplies and converters due to its high voltage rating.
2. Motor Control: In motor drivers and inverter circuits for efficient control of electric motors.
3. Lighting: In LED drivers and lighting systems for energy-efficient operation.
4. Telecommunications: In power amplifiers and RF applications.
5. Consumer Electronics: In devices requiring efficient switching and thermal management.
Its high voltage capability and efficiency make it suitable for these domains.

Package

The TK17A80W is typically packaged in a TO-220 format. This package type is commonly used for power semiconductor devices, providing good thermal performance and ease of mounting on heatsinks.

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