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TPS51100DGQ
+Lista de MateriaisIC REG CONV DDR 1OUT 10MSOP
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FabricanteTexas Instruments
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Peça do Fabricante #TPS51100DGQ
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Pacote HVSSOP-10
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Em Estoque3933
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Especificações
| Atributo | Valor |
| Package / Case | Bulk,Tube |
| Part Status | Active |
| Applications | Converter, DDR |
| Voltage - Input | 4.75V ~ 5.25V |
| Number of Outputs | 1 |
| Voltage - Output | 1.2V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C |
| Mounting Type | Surface Mount |
Visão Geral
Description
Key features of the TPS51100DGQ include:
1. DDR Termination: It is commonly employed for DDR (Double Data Rate) memory termination, providing a steady, low-noise voltage supply essential for such high-speed memory modules.
2. Low Dropout Voltage: The circuit allows for a minimal voltage difference between input and output, improving efficiency and reducing power loss.
3. Over-Current Protection: It features robust protection mechanisms to prevent damage due to over-current conditions, ensuring reliability.
4. Thermal Shutdown: In the event of excessive temperatures, the device is designed to shut down, protecting the circuit from thermal damage.
5. Compact Package: Offered in a compact MSOP package, it saves space on the PCB, making it suitable for compact designs.
Overall, the TPS51100DGQ is valued for its efficiency and reliability in power-sensitive applications.
Equivalent
1. LT1763 from Analog Devices: Offers similar low dropout performance.
2. MIC5205 from Microchip Technology: Another LDO with comparable features.
3. NCP1117 from ON Semiconductor: Commonly used LDO regulator.
4. AP7331 from Diodes Incorporated: Provides similar functionalities.
Ensure compatibility with your specific application requirements when choosing an alternative.
Features
1. Input Voltage Range: Supports a wide input voltage range from 2.3V to 3.5V.
2. Output Voltage: Capable of tracking a reference voltage with a 0.5V to 2.5V range, suitable for DDR, DDR2, DDR3, and LPDDR memory applications.
3. Sink/Source Capability: Provides both sink and source current capabilities to effectively manage power requirements of memory termination.
4. Low Output Voltage Offset: Ensures accuracy with a low voltage offset, promoting stability and performance.
5. Fast Transient Response: Designed to handle quick changes in load conditions efficiently.
6. Current Limiting: Includes over-current protection for enhanced safety and reliability.
7. Thermal Shutdown: Equipped with thermal protection to prevent damage from overheating.
8. Power-Save Mode: Offers improved efficiency during low-load conditions.
9. Package: Available in a compact MSOP-10 package, facilitating space-saving designs in mobile and compact applications.
These features make the TPS51100DGQ ideal for applications requiring reliable and efficient memory termination.
Pinout
Key functions of the TPS51100 include:
- A built-in 1-A sink/source low-dropout regulator (LDO) for generating the DDR memory termination voltage.
- High-speed differential amplifier to provide excellent load regulation.
- Supports both DDR, DDR2, and DDR3 memory applications by generating a termination voltage equal to VDDQ/2.
- Built-in power MOSFETs for both sourcing and sinking current.
- Features like soft-start, power-good signal, and current limiting for protection.
The device's layout includes pins for VDDQ (supply voltage), VTT (termination output), VREF (reference voltage), and various other control and power supply connections. The PowerPAD package enhances thermal performance. Always refer to the specific datasheet for detailed pin functions and descriptions.