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UCC21710QDWRQ1
+Lista de MateriaisDGTL ISO 5.7KV 1CH GT DVR 16SOIC
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FabricanteTexas Instruments
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Peça do Fabricante #UCC21710QDWRQ1
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Ficha Técnica UCC21710QDWRQ1 DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Technology | Capacitive Coupling |
| Number of Channels | 1 |
| Voltage - Isolation | 5700Vrms |
| Common Mode Transient Immunity (Min) | 150V/ns |
| Propagation Delay tp LH / tp HL (Max) | 130ns, 130ns |
| Pulse Width Distortion (Max) | 30ns |
| Rise / Fall Time (Typ) | 33ns, 27ns |
| Current - Output High, Low | 10A, 10A |
| Current - Peak Output | 10A |
| Voltage - Output Supply | 13V ~ 33V |
| Grade | Automotive |
| Operating Temperature | -40°C ~ 125°C |
| Mounting Type | Surface Mount |
| Package / Case | 16-SOIC (0.295", 7.50mm Width) |
| Supplier Device Package | 16-SOIC |
| Approval Agency | UL, VDE |
| Base Product Number | UCC21710 |
| Qualification | AEC-Q100 |
Visão Geral
Description
Key specifications include a peak source and sink current of 10 A, and an isolation barrier life of about 25 years, ensuring long-term dependability. The UCC21710QDWRQ1 also supports adjustable turn-on and turn-off for optimized switching performance and includes a soft turn-off capability to mitigate fault conditions. It is typically used in applications like motor drives, solar inverters, and power supply systems where efficient and reliable power conversion is critical. This driver is part of TI’s reinforced isolated gate driver family, underlining its suitability for automotive and industrial applications requiring high isolation levels.
Equivalent
1. Infineon's 1ED3122MU12F: A comparable isolated gate driver for IGBTs and SiC MOSFETs.
2. Analog Devices' ADuM4135: Another isolated gate driver with similar functionality.
3. ON Semiconductor's NCD57084: Offers similar features for driving IGBTs and SiC MOSFETs.
These alternatives provide similar isolation, driving capabilities, and protection features, making them potential substitutes. Always verify specific requirements and performance characteristics for compatibility.
Features
1. Isolation & Performance: Offers reinforced isolation with a 5.7 kV RMS rating, ensuring safe and reliable operation in high-voltage environments.
2. Advanced Protection: Equipped with desaturation detection for short-circuit protection, active miller clamp, and soft turn-off for fault scenarios.
3. Fast Switching: Supports high-speed switching with minimum propagation delay and delay matching, optimizing efficiency in power conversion.
4. Robust Design: Features a wide temperature range of -40°C to +125°C and complies with automotive standards (AEC-Q100 qualified).
5. Analog & Digital Interface: Includes a two-level turn-off with configurable thresholds, as well as ready and fault feedback signals.
6. Power Supply Flexibility: Operates with a wide supply voltage range, enhancing compatibility with diverse applications.
This gate driver is particularly suitable for automotive, industrial, and renewable energy applications, offering enhanced protection and efficiency in power electronics systems.
Pinout
1. Pin Count: The device has a total of 16 pins.
2. Function Overview:
- Input and Logic Control: The driver includes pins for PWM input signals and fault signal outputs.
- Power Supply: It has pins for VCC (input side power) and VDD (output side power).
- Gate Drive: Pins are allocated for connecting to the gate of the transistor, providing the drive signals.
- Isolation Barrier: It provides galvanic isolation between the input and output sections.
- Protection Features: The device includes pins for fault monitoring, under-voltage lockout, and Miller clamping.
This gate driver is particularly noted for its high-speed operation and built-in protection features which make it suitable for high-power and high-reliability applications.