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W29N01HVSINA
+Lista de MateriaisIC FLASH 1GBIT 48-TSOP
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FabricanteWinbond Electronics
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Peça do Fabricante #W29N01HVSINA
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Ficha Técnica W29N01HVSINA DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Base Product Number | W29N01 |
| Digi Key Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Write Cycle Time - Word, Page | 25ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP |
| Packaging | Tray |
| Access Time | 25 ns |
Visão Geral
Description
Equivalent
Features
1. Capacity: Typically, it offers 1GB of storage capacity, making it suitable for devices requiring moderate storage space.
2. Technology: Utilizes NAND Flash technology, providing non-volatile storage that retains data without power.
3. Interface: Supports a standard interface for easy integration into systems.
4. Voltage: Operates at a low voltage, enhancing energy efficiency and suitability for portable electronic devices.
5. Performance: Offers fast read and write speeds, aiding in efficient data handling.
6. Endurance and Reliability: Designed for high endurance with a significant number of program/erase cycles, ensuring longevity.
7. Package Type: Available in a compact package, facilitating incorporation into space-constrained designs.
8. Security Features: May include security options like password protection and data encryption.
These features make the W29N01HVSINA a versatile component for consumer electronics, industrial applications, and other areas needing reliable flash memory.
Pinout
- I/O pins (I/O0-I/O7): These are used for data input and output operations.
- CLE (Command Latch Enable): This pin is used to latch command data into the command register.
- ALE (Address Latch Enable): This pin is used to latch address data into the address register.
- CE# (Chip Enable): This pin activates the chip for operation.
- WE# (Write Enable): This pin controls the write operation.
- RE# (Read Enable): This pin controls the read operation.
- WP# (Write Protect): This pin is used to protect the memory from being written.
- R/B# (Ready/Busy): This pin indicates the operational status of the chip.
- VCC: Power supply pin.
- VSS: Ground pin.
For precise pin configuration and functionalities, refer to the manufacturer's datasheet.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the memory density and organization of the W29N01HVSINA?
A: It is a 1Gbit (128M x 8) NAND Flash memory, organized as 128 Megabyte pages, suitable for high-density data storage.
Q: Does this part support single-level cell (SLC) or multi-level cell (MLC) technology?
A: It uses SLC (Single-Level Cell) technology, offering higher endurance, faster read/write speeds, and better reliability compared to MLC.
Q: What is the supply voltage range and operating temperature?
A: It operates from 2.7V to 3.6V, with an industrial temperature range of -40°C to +85°C, making it suitable for harsh environments.
Q: What is the typical page write cycle time for this NAND Flash?
A: The write cycle time per word or page is 25ns, enabling fast programming during memory operations.
Q: Can this chip be used in embedded systems requiring surface mount packaging?
A: Yes, it comes in a 48-TFSOP surface mount package (48-TSOP), ideal for compact PCB designs in embedded applications.
Q: Is this component verified for design-in confidence by DigiKey?
A: Yes, it is DigiKey Programmable Verified, ensuring its compatibility and reliability for prototyping and production.