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ZVN3320FTA
+Lista de MateriaisMOSFET N-CH 200V 60MA SOT23-3
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FabricanteDiodes Incorporated
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Peça do Fabricante #ZVN3320FTA
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Ficha Técnica ZVN3320FTA DataSheet
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Pacote SOT-23-3
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 60mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 25Ohm @ 100mA, 10V |
| Vgs(th)(Max) @ Id | 3V @ 1mA |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 45 pF @ 25 V |
| Power Dissipation (Max) | 330mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
Visão Geral
Description
The ZVN3320FTA comes in a compact SOT-23 package, which is suitable for surface-mounted technology (SMT), facilitating easy integration into printed circuit boards (PCBs). Its fast switching capabilities and low gate charge make it ideal for battery-powered devices, portable electronics, and other applications that require efficient power management. Additionally, it is commonly utilized in signal processing, DC-DC converters, and small motor controls. The device's reliability and performance make it a popular choice for engineers designing compact and efficient electronic systems.
Equivalent
1. 2N7000- A widely used N-channel MOSFET.
2. BS170- Another popular N-channel MOSFET with similar specifications.
3. BSS138- A small-signal N-channel MOSFET.
4. 2N7002 - SMD version of 2N7000 with similar characteristics.
These alternatives can be considered based on specific circuit requirements and package preferences. Always verify the datasheet for detailed specifications and compatibility.
Features
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of around 60V and a continuous drain current (I_D) of approximately 0.53A, making it suitable for low to moderate power applications.
2. On-Resistance: The MOSFET features a low on-resistance, often around 5 ohms, ensuring efficient operation with minimal power loss when in the 'on' state.
3. Package: It is usually available in a compact SOT-23 package, enabling space-saving designs ideal for densely packed printed circuit boards (PCBs).
4. Gate Threshold Voltage: The device often has a gate threshold voltage (V_GS(th)) in the range of 1-2.5V, ensuring easy driving with low voltage logic levels.
5. Fast Switching Speed: Its rapid switching capabilities make it suitable for high-speed applications, enhancing performance in circuits requiring quick transitions.
These attributes make the ZVN3320FTA a versatile component for various electronic projects, including switching, amplification, and power management tasks.
Pinout
1. Gate (G): This is the control terminal for the MOSFET. By applying a voltage here, you can control the flow of current between the drain and the source.
2. Drain (D): This is the terminal through which the main current flows when the MOSFET is in the 'on' state. It's connected to the load in most applications.
3. Source (S): This is the terminal connected to the ground or the negative side of the power supply in an N-channel MOSFET. It acts as the return path for the current.
These MOSFETs are often used in low-power switching applications due to their fast switching speeds and efficiency.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and power supply circuits for efficient voltage regulation.
2. Switching Applications: Ideal for high-speed switching in consumer electronics and communication devices.
3. Load Switches: Employed in battery-powered devices to control power to various components.
4. Signal Processing: Utilized in amplifiers and signal modulation circuits.
5. Automotive: Used in control modules and electronic control units (ECUs) for vehicle systems.
Its versatility makes it suitable for a wide range of electronic and industrial applications.