ZXMN2F30FHTA

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ZXMN2F30FHTA

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MOSFET N-CH 20V 4.1A SOT23-3

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Especificações

Atributo Valor
Supplier Diodes Incorporated
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain(Id) @ 25°C 4.1A (Ta)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 4.5V
Rds On(Max) @ Id Vgs 45mOhm @ 2.5A, 4.5V
Vgs(th)(Max) @ Id 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 4.8 nC @ 4.5 V
Vgs(Max) ±12V
Input Capacitance(Ciss)(Max) @ Vds 452 pF @ 10 V
Power Dissipation (Max) 960mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3

Visão Geral

Description

The ZXMN2F30FHTA is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). This component is designed for electronic applications that require efficient power management and switching. Its features typically include low on-resistance for reduced power loss, high-speed switching capabilities, and robust thermal performance.
The ZXMN2F30FHTA is often used in applications such as DC-DC converters, load switches, and power management systems. It comes in a compact SOT-23 package, making it suitable for use in space-constrained circuit boards. The transistor is designed to handle moderate power levels and operates efficiently, often featuring a drain-source voltage (V_DS) of around 30V and a continuous drain current (I_D) of several amps.
This MOSFET is utilized for its efficiency and reliability, which are critical in both consumer electronics and industrial applications. Engineers choose the ZXMN2F30FHTA for its balance of performance and size, making it a versatile component in the design of modern electronic circuits.

Equivalent

The ZXMN2F30FHTA is an N-channel MOSFET. Equivalent products can include:
1. IRLML2502 - Similar N-channel MOSFET with comparable voltage and current ratings.
2. BSN20BK - Offers similar characteristics suitable for low to medium power applications.
3. NTZD3154C - Dual N-channel with similar specifications.

Always verify electrical characteristics like maximum voltage, current, RDS(on), and package type to ensure compatibility.

Features

The ZXMN2F30FHTA is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching and amplification tasks. Key features include:
1. Type: N-channel MOSFET.
2. Voltage: It typically supports a drain-source voltage (V_DS) of around 30V.
3. Current: It can handle a continuous drain current (I_D) of approximately 4.9A.
4. R_DS(on): The on-resistance is low, usually around 22mΩ, minimizing power loss.
5. Package: Often available in a compact SOT-23 or similar surface-mount package.
6. Applications: Suitable for low voltage, high-speed switching applications, such as in DC-DC converters, battery management systems, and load switches.
7. Thermal Performance: Offers good thermal performance for efficient heat dissipation.
8. Efficiency: Optimized for low gate charge, providing efficient switching with minimal energy loss.
9. Reliability: Built to ensure robustness and reliability in various electronic applications.
These features make it suitable for use in a wide range of electronic projects and devices requiring efficient and reliable power management.

Pinout

The ZXMN2F30FHTA is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with an SOT-23 package. It typically has a 3-pin configuration. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's operation by applying voltage, which regulates the flow of current between the drain and source.
2. Drain (D): The drain pin is where the current flows out of the transistor. It is connected to the load in the circuit.
3. Source (S): The source pin is where the current enters the transistor. It is often connected to ground or the negative side of a circuit.
This device is commonly used for switching applications and general-purpose amplification due to its low on-resistance and fast switching speed. It is suitable for low- to medium-power applications.

Manufacturer

The ZXMN2F30FHTA is manufactured by Diodes Incorporated. Diodes Incorporated is a global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. The company serves a diverse range of markets including consumer electronics, computing, communications, industrial, and automotive sectors. Diodes Incorporated focuses on delivering semiconductor products that enhance efficiency and performance, with an emphasis on power management, connectivity, protection, and signal switching solutions.

Application

The ZXMN2F30FHTA is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various electronic applications. Its primary application areas include power management systems, where it is used for switching and amplification purposes. It is frequently utilized in DC-DC converters, load switches, and motor control circuits due to its efficient switching capabilities. Additionally, it can be found in consumer electronics for battery-powered devices, where low power consumption is crucial. The ZXMN2F30FHTA's compact size and thermal efficiency make it suitable for compact electronic designs and portable applications.

Package

The ZXMN2F30FHTA is a MOSFET with a SOT-23 package type. The SOT-23 is a small, surface-mount package commonly used for housing transistors and similar semiconductor devices.

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