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ZXMP10A18GTA
+Lista de MateriaisMOSFET P-CH 100V 2.6A SOT223
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FabricanteDiodes Incorporated
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Peça do Fabricante #ZXMP10A18GTA
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Ficha Técnica ZXMP10A18GTA DataSheet
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Pacote SOT-223-4
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 2.6A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 150mOhm @ 2.8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 26.9 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1055 pF @ 50 V |
| PowerDissipation(Max) | 2W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223-3 |
Visão Geral
Description
Key features include low on-resistance, which ensures minimal power loss and improved efficiency, and fast switching speed, which enhances performance in dynamic applications. The ZXMP10A18GTA is housed in a compact and thermally efficient surface-mount package, typically the TO-252 (DPAK), facilitating easy integration onto PCBs.
Its robust design offers protection against over-voltage and over-current conditions, contributing to the reliability and longevity of electronic devices. This MOSFET is particularly beneficial in applications requiring low voltage drive and high current handling, making it a versatile component in the design of modern electronic circuits.
Equivalent
1. IRF9540N - P-channel MOSFET from Infineon Technologies.
2. FQP27P06 - P-channel MOSFET from ON Semiconductor.
3. SI4947EY - P-channel MOSFET from Vishay Siliconix.
4. AOI418 - P-channel MOSFET from Alpha & Omega Semiconductor.
These equivalents share similar voltage and current ratings, but be sure to verify specific parameters and package compatibility for your application.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of -100V and can handle a continuous drain current (I_D) of up to -3.9A.
2. Low On-Resistance: The MOSFET offers a low on-resistance, enhancing efficiency by reducing power losses during operation.
3. Gate Threshold Voltage: It has a gate-source threshold voltage (V_GS(th)) typically around -2V to -4V, enabling it to turn on effectively with standard logic levels.
4. Fast Switching Speed: The device is designed for fast switching, which is beneficial for applications requiring high-speed operation.
5. Package Type: It comes in a surface-mount SOT-223 package, which is ideal for compact designs and efficient thermal management.
6. Applications: Commonly used in power management, DC-DC converters, and load switching applications.
These features make the ZXMP10A18GTA suitable for applications that require reliable performance in a compact form factor.
Pinout
1. Gate (G): This pin controls the MOSFET's operation. Applying a voltage to the gate allows the current to flow between the source and drain.
2. Source (S): This is typically connected to the negative side of the voltage supply. For a P-channel MOSFET, the source is connected to a higher voltage than the drain.
3. Drain (D): Current flows from the source to the drain when the MOSFET is turned on (i.e., when a voltage is applied to the gate).
The ZXMP10A18GTA is used in various applications such as power management, load switching, and DC-DC converters due to its low on-resistance and efficiency in controlling high-power loads.
Manufacturer
Application
1. Power Management: Used in DC-DC converters, voltage regulation, and power switching circuits.
2. Load Switching: Effective for controlling power loads in devices, offering high-speed switching capabilities.
3. Battery-Powered Devices: Ideal for power management in portable electronics due to low power consumption.
4. Consumer Electronics: Utilized in devices like laptops and smartphones for efficient power delivery.
5. Automotive Applications: Employed in electronic control units for efficiently managing power distribution.
Its low on-resistance and high-speed operation make it suitable for applications requiring efficient power control and management.