2N7002E vs 2N7002,215

Esta comparação detalhada entre 2N7002E e 2N7002,215 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002E is a viable functional replacement candidate for the 2N7002,215 in most low-power switching applications, provided that the slightly higher on-resistance and tighter package tolerance are acceptable for the target design. Designers should validate thermal performance and gate drive conditions before committing to a drop-in substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current Validation required
On-Resistance Validation required
Package Type High match

Parts at a glance

Part A

2N7002E

Componentes Eletrônicos Panasônicos

Lifecycle
Active
Stock
3552 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E 2N7002,215
Part Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 300mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 10V
Rds On(Max) @ Id Vgs 3Ohm @ 100mA, 10V 5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 3V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.8 nC @ 4.5 V -
Vgs(Max) ±20V ±30V
Input Capacitance(Ciss)(Max) @ Vds 40 pF @ 10 V 50 pF @ 10 V
Power Dissipation (Max) 350mW (Ta) 830mW (Ta)
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series - TrenchMOS™