2N7002 vs 2N7001TQDCKRQ1

Esta comparação detalhada entre 2N7002 e 2N7001TQDCKRQ1 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Not a drop-in replacement

The 2N7001TQDCKRQ1 is not a drop-in replacement for the 2N7002. While both are N-channel MOSFETs, they differ fundamentally in threshold voltage class, on-resistance, current handling, and package footprint, requiring circuit redesign and layout changes.

Different threshold voltage class Different on-resistance Different current rating Different package footprint

Parts at a glance

Part A

2N7002

STMicroeletrônica

Lifecycle
Active
Stock
1470 PCS
Package
SOT-23
Series
Transistors - FETs, MOSFETs - Single

Key differences

Rows are prioritized by design impact. Highlighted values require attention during substitution.

Key electrical and mechanical differences between the two devices

Parameter 2N7002 2N7001TQDCKRQ1 Why it matters
Manufacturer onsemi / Nexperia / Diodes (multi-source) Texas Instruments Different manufacturers mean different process technologies, documentation, and qualification data, which affects sourcing and second-source strategy.
Device Type N-Channel MOSFET Single Buffer / Logic Translator These are fundamentally different device classes, so they are not functionally interchangeable in most circuits.
Drain-to-Source Voltage (VDS) / Supply Voltage 60 V 1.65 V to 5.5 V (VCC) Voltage rating defines the maximum stress the device can withstand and the supply range it can operate from.
Continuous Drain Current / Output Drive ~115 mA to 300 mA (ID) ±8 mA (output drive) Current handling capability determines whether the device can drive the required load directly.
On-Resistance / Output Impedance ~1.2 Ω to 7.5 Ω (RDS(on)) Not applicable (logic buffer) RDS(on) affects conduction losses and voltage drop in MOSFET switching applications.
Gate Threshold / Input Threshold Voltage 1 V to 2.5 V (VGS(th)) ~0.7 × VCC (VIH) Threshold voltage determines the logic level required to turn on or trigger the device.
Package SOT-23 (TO-236) SC-70 (SOT-323) Package footprint and thermal characteristics affect PCB layout and assembly compatibility.
Operating Temperature Range -55 °C to +150 °C -40 °C to +125 °C Temperature range determines suitability for automotive, industrial, or commercial environments.
Qualification Commercial / Industrial AEC-Q100 Qualified (Automotive) Automotive qualification indicates enhanced reliability testing required for vehicle applications.

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002 2N7001TQDCKRQ1
Supplier - Texas Instruments
Series STripFET™ Automotive, AEC-Q100
Part Status Obsolete Active
Translator Type - Voltage Level
Channel Type - Unidirectional
Number of Circuits - 1
Channelsper Circuit - 1
Voltage - VCCA - 1.65 V ~ 3.6 V
Voltage - VCCB - 1.65 V ~ 3.6 V
Input Signal - CMOS
Output Signal - CMOS
Output Type - Push-Pull
Data Rate - 100Mbps
Operating Temperature -55°C ~ 150°C (TJ) -40°C ~ 125°C (TA)
Mounting Type Surface Mount Surface Mount
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain(Id) @ 25°C 200mA (Tc) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V -
Vgs(th)(Max) @ Id 3V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 2 nC @ 5 V -
Vgs(Max) ±18V -
Input Capacitance(Ciss)(Max) @ Vds 43 pF @ 25 V -
Power Dissipation (Max) 350mW (Tc) -

Frequently asked questions

What are the fundamental differences between the 2N7002 and the 2N7001TQDCKRQ1?

The 2N7002 is a widely available, single N-channel enhancement-mode MOSFET typically rated for 60 V VDS and 115 mA continuous drain current, commonly housed in SOT-23. The 2N7001TQDCKRQ1 is an automotive-qualified, single N-channel MOSFET in a 5-pin SC-70 (SOT-353) package, designed with a logic-level gate and specified for AEC-Q100 Grade 1 operation. They are not pin-to-pin or specification equivalents.

Can the 2N7002 and 2N7001TQDCKRQ1 be used interchangeably in a design?

No. The 2N7002 is a 3-pin SOT-23 device, while the 2N7001TQDCKRQ1 is a 5-pin SC-70 device with a different pinout and footprint. Electrical ratings, gate-threshold characteristics, and qualification levels also differ, so direct substitution requires full validation against the target circuit and manufacturer datasheets.

What is the difference in package and pin configuration between these two MOSFETs?

The 2N7002 uses the standard 3-lead SOT-23 package with pins for gate, source, and drain. The 2N7001TQDCKRQ1 uses a 5-lead SC-70 (SOT-353) package; the additional pins are typically used for improved thermal or electrical connection, and the pinout is not identical to the SOT-23. PCB land patterns are therefore not compatible.

Which of these two devices is automotive-qualified?

The 2N7001TQDCKRQ1 is automotive-qualified and is typically specified to AEC-Q100 Grade 1 requirements, making it suitable for automotive applications. The standard 2N7002 is a general-purpose commercial/industrial device and is not automotive-qualified unless a specific manufacturer offers an automotive-grade variant under a different part number.

How do the voltage and current ratings compare between the 2N7002 and 2N7001TQDCKRQ1?

The 2N7002 is typically rated at 60 V drain-source voltage and 115 mA continuous drain current. The 2N7001TQDCKRQ1 is a lower-voltage, logic-level MOSFET with ratings that differ from the 2N7002; designers must consult the specific manufacturer datasheet for exact VDS, ID, and power dissipation limits, as these are not interchangeable between the two part numbers.

Are the gate drive requirements the same for both devices?

No. The 2N7002 has a relatively high gate threshold voltage and is not always fully enhanced at low logic levels. The 2N7001TQDCKRQ1 is designed as a logic-level device with a lower threshold voltage, allowing it to be driven directly from low-voltage logic. Gate drive circuits must be evaluated separately for each part.

What applications are typically associated with each device?

The 2N7002 is commonly used in general-purpose switching, level shifting, and low-current load control in commercial and industrial electronics. The 2N7001TQDCKRQ1 is intended for automotive and other high-reliability applications where AEC-Q100 qualification and a compact SC-70 footprint are required.

What should be verified before replacing a 2N7002 with a 2N7001TQDCKRQ1?

Before replacement, verify pinout and footprint compatibility, VDS and ID ratings, gate threshold and drive voltage, power dissipation, thermal performance, and qualification requirements. The 5-pin SC-70 package of the 2N7001TQDCKRQ1 will not fit a 3-pin SOT-23 land pattern, so a PCB layout change is typically required.