2N7002 vs 2N7002CK

Esta comparação detalhada entre 2N7002 e 2N7002CK fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002CK is a functionally compatible replacement candidate for the 2N7002 in most low-power switching applications, with matching drain-source voltage, continuous drain current, and package footprint. Designers should validate gate threshold voltage tolerance and thermal behavior under application-specific conditions before committing to production.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Gate Threshold Voltage Validation required
Package Type High match

Parts at a glance

Part A

2N7002

STMicroeletrônica

Lifecycle
Active
Stock
1470 PCS
Package
SOT-23
Series
Transistors - FETs, MOSFETs - Single
Part B

2N7002CK

Nexperia USA Inc.

Lifecycle
Active
Stock
1570 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002 2N7002CK
Part Status Obsolete Active
Series STripFET™ -
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain(Id) @ 25°C 200mA (Tc) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V -
Vgs(th)(Max) @ Id 3V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 2 nC @ 5 V -
Vgs(Max) ±18V -
Input Capacitance(Ciss)(Max) @ Vds 43 pF @ 25 V -
Power Dissipation (Max) 350mW (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -