2N7002ET1G vs 2N7002E-T1-E3

Esta comparação detalhada entre 2N7002ET1G e 2N7002E-T1-E3 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G and 2N7002E-T1-E3 are functionally equivalent N-channel small-signal MOSFETs sharing the same SOT-23 package, 60 V drain-source voltage rating, and 300 mA continuous drain current capability. Both parts are suitable for low-side switching, level shifting, and small-signal amplification applications. Designers may treat them as interchangeable in most circuits, though final validation against the specific manufacturer datasheet is recommended to confirm gate threshold, on-resistance, and thermal characteristics for the target application.

Package Type High match
Drain-Source Voltage Rating High match
Continuous Drain Current High match
On-Resistance and Gate Threshold Validation required

Review the critical differences →

Parts at a glance

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002ET1G 2N7002E-T1-E3
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 260mA (Ta) 240mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 2.5Ohm @ 240mA, 10V 3Ohm @ 250mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.81 nC @ 5 V 0.6 nC @ 4.5 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 26.7 pF @ 25 V 21 pF @ 5 V
Power Dissipation (Max) 300mW (Tj) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Compare RFQ