2N7002,215 vs 2N7002ET1G

Esta comparação detalhada entre 2N7002,215 e 2N7002ET1G fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G and 2N7002,215 are functionally equivalent N-channel enhancement-mode MOSFETs with matching voltage, current, and package ratings, making them suitable drop-in replacements for most low-power switching and level-shifting applications. Designers should verify gate threshold and RDS(on) tolerances against their specific circuit requirements before finalizing the substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Static Drain-Source On-Resistance Validation required

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Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002,215 2N7002ET1G
Series TrenchMOS™ -
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 260mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Vgs(Max) ±30V ±20V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 10 V 26.7 pF @ 25 V
Power Dissipation (Max) 830mW (Ta) 300mW (Tj)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Gate Charge(Qg)(Max) @ Vgs - 0.81 nC @ 5 V
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