2N7002K-7 vs 2N7002CK

Esta comparação detalhada entre 2N7002K-7 e 2N7002CK fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K-7 and 2N7002CK are functionally compatible N-channel MOSFETs with matching voltage, current, and package characteristics, making them suitable drop-in replacement candidates for most low-power switching applications. Designers should verify gate threshold tolerances and thermal performance against specific circuit requirements before finalizing substitution.

Drain-Source Voltage Rating High match

Continuous Drain Current High match

Package Type High match

Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002K-7

Diodes Incorporated

Lifecycle: Active
Stock: 5630 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+Lista de Materiais RFQ

Part B

2N7002CK

Nexperia USA Inc.

Lifecycle: Active
Stock: 1570 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+Lista de Materiais RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002K-7	2N7002CK
Part Status	Active	Active
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-
Drain to Source Voltage (Vdss)	60 V	-
Current - Continuous Drain(Id) @ 25°C	380mA (Ta)	-
Drive Voltage(Max Rds On Min Rds On)	5V, 10V	-
Rds On(Max) @ Id Vgs	2Ohm @ 500mA, 10V	-
Vgs(th)(Max) @ Id	2.5V @ 1mA	-
Gate Charge(Qg)(Max) @ Vgs	0.3 nC @ 4.5 V	-
Vgs(Max)	±20V	-
Input Capacitance(Ciss)(Max) @ Vds	50 pF @ 25 V	-
Power Dissipation (Max)	370mW (Ta)	-
Operating Temperature	-55°C ~ 150°C (TJ)	-
Mounting Type	Surface Mount	-

Compare RFQ