2N7002K vs 2N7002E-T1-E3

Esta comparação detalhada entre 2N7002K e 2N7002E-T1-E3 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K and 2N7002E-T1-E3 are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making the 2N7002K a viable functional replacement candidate for the 2N7002E-T1-E3 in most low-power switching applications. Designers should verify gate threshold voltage tolerances and RDS(on) characteristics against their specific circuit requirements before committing to a drop-in substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
On-Resistance RDS(on) Validation required

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Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002K 2N7002E-T1-E3
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 240mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 2Ohm @ 500mA, 10V 3Ohm @ 250mA, 10V
Vgs(th)(Max) @ Id 1.9V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 0.6 nC @ 4.5 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 25 V 21 pF @ 5 V
Power Dissipation (Max) 350mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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