2N7002K-7 vs 2N7002K

Esta comparação detalhada entre 2N7002K-7 e 2N7002K fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K and 2N7002K-7 are functionally equivalent N-channel MOSFETs sharing identical electrical characteristics, package type, and pinout. The 2N7002K-7 represents a tape-and-reel packaging variant of the same device, making it a direct drop-in replacement for automated assembly processes.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
On-Resistance High match

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Parts at a glance

Part A

2N7002K-7

Diodes Incorporated

Lifecycle
Active
Stock
5630 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002K-7 2N7002K
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 380mA (Ta) 300mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V 5V, 10V
Rds On(Max) @ Id Vgs 2Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 1mA 1.9V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.3 nC @ 4.5 V -
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V
Power Dissipation (Max) 370mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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