DGD2190MS8-13 vs DGD2104AS8-13

Esta comparação detalhada entre DGD2190MS8-13 e DGD2104AS8-13 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

DGD2190MS8-13

Diodes Incorporated

Lifecycle: Active
Stock: 2801 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

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Part B

DGD2104AS8-13

Diodes Incorporated

Lifecycle: Active
Stock: 4508 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	DGD2190MS8-13	DGD2104AS8-13
Part Status	Active	Obsolete
Driven Configuration	Half-Bridge	Half-Bridge
Channel Type	Independent	Synchronous
Number of Drivers	2	2
Gate Type	IGBT, N-Channel MOSFET	IGBT, N-Channel MOSFET
Voltage - Supply	10V ~ 20V	10V ~ 20V
Logic Voltage - VILVIH	0.8V, 2.5V	0.8V, 2.5V
Current - Peak Output(Source Sink)	4.5A, 4.5A	210mA, 360mA
Input Type	Non-Inverting	Non-Inverting
High Side Voltage - Max(Bootstrap)	600 V	600 V
Rise / Fall Time(Typ)	25ns, 20ns	100ns, 50ns
Operating Temperature	-40°C ~ 125°C (TA)	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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