DMG1029SV-7 vs DMG1012UW-7

Esta comparação detalhada entre DMG1029SV-7 e DMG1012UW-7 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

DMG1029SV-7

Diodes Incorporated

Lifecycle: Active
Stock: 4091 PCS
Package: SOT-563-6
Series: Transistores - FETs, MOSFETs - Arrays

+Lista de Materiais RFQ

Part B

DMG1012UW-7

Diodes Incorporated

Lifecycle: Active
Stock: 5608 PCS
Package: SOT-323-3
Series: Transistors - FETs, MOSFETs - Single

+Lista de Materiais RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	DMG1029SV-7	DMG1012UW-7
Part Status	Active	Active
FET Type	N and P-Channel	N-Channel
Technology	-	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V	20 V
Current - Continuous Drain(Id) @ 25°C	500mA, 360mA	1A (Ta)
Drive Voltage(Max Rds On Min Rds On)	-	1.8V, 4.5V
Rds On(Max) @ Id Vgs	1.7Ohm @ 500mA, 10V	450mOhm @ 600mA, 4.5V
Vgs(th)(Max) @ Id	2.5V @ 250µA	1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	0.3nC @ 4.5V	0.74 nC @ 4.5 V
Vgs(Max)	-	±6V
Input Capacitance(Ciss)(Max) @ Vds	30pF @ 25V	60.67 pF @ 16 V
Power Dissipation (Max)	-	290mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
FET Feature	Logic Level Gate	-
Power - Max	450mW	-

Compare RFQ