FDMC86116LZ vs FDMC86160

Esta comparação detalhada entre FDMC86116LZ e FDMC86160 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification FDMC86116LZ FDMC86160
Series PowerTrench® PowerTrench®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain(Id) @ 25°C - 9A (Ta), 43A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 6V, 10V
Rds On(Max) @ Id Vgs - 14mOhm @ 9A, 10V
Vgs(th)(Max) @ Id - 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 22 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 1290 pF @ 50 V
Power Dissipation (Max) 2.3W (Ta), 19W (Tc) 2.3W (Ta), 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number FDMC86116 -
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta), 7.5A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 103mOhm @ 3.3A, 10V -
Vgs(th) (Max) @ Id 2.2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 50 V -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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