FDMC86259P vs FDMC8878

Esta comparação detalhada entre FDMC86259P e FDMC8878 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part B

FDMC8878

Semiconductor Fairchild

Lifecycle
Active
Stock
7724 PCS
Package
WDFN-8
Series
Transistors - FETs, MOSFETs - Single
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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification FDMC86259P FDMC8878
Series PowerTrench® PowerTrench®
Part Status Active Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 30 V
Current - Continuous Drain(Id) @ 25°C - 9.6A (Ta), 16.5A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 14mOhm @ 9.6A, 10V
Vgs(th)(Max) @ Id - 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 26 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 1230 pF @ 15 V
Power Dissipation (Max) 2.3W (Ta), 62W (Tc) 2.1W (Ta), 31W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number FDMC86259 -
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta), 13A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V -
Rds On (Max) @ Id, Vgs 107mOhm @ 3A, 10V -
Vgs(th) (Max) @ Id 4V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V -
Vgs (Max) ±25V -
Input Capacitance (Ciss) (Max) @ Vds 2045 pF @ 75 V -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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