FDMC86259P vs FDMC8884

Esta comparação detalhada entre FDMC86259P e FDMC8884 fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification FDMC86259P FDMC8884
Series PowerTrench® PowerTrench®
Part Status Active Obsolete
Base Product Number FDMC86259 -
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 30 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta), 13A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V -
Rds On (Max) @ Id, Vgs 107mOhm @ 3A, 10V -
Vgs(th) (Max) @ Id 4V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V -
Vgs (Max) ±25V -
Input Capacitance (Ciss) (Max) @ Vds 2045 pF @ 75 V -
Power Dissipation (Max) 2.3W (Ta), 62W (Tc) 2.3W (Ta), 18W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
Current - Continuous Drain(Id) @ 25°C - 9A (Ta), 15A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 19mOhm @ 9A, 10V
Vgs(th)(Max) @ Id - 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 14 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 685 pF @ 15 V
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