FGH40N60SMDF vs FGH40N120ANTU

Esta comparação detalhada entre FGH40N60SMDF e FGH40N120ANTU fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

FGH40N60SMDF

onsemi

Lifecycle: Active
Stock: 3198 PCS
Package: TO-247
Series: Transistores - IGBTs - Single

+Lista de Materiais RFQ

Part B

FGH40N120ANTU

onsemi

Lifecycle: Active
Stock: 4463 PCS
Package: TO-247-3
Series: Transistores - IGBTs - Single

+Lista de Materiais RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	FGH40N60SMDF	FGH40N120ANTU
Supplier	-	Rochester Electronics, LLC,onsemi
Part Status	Active	Obsolete
IGBT Type	Field Stop	NPT
Voltage - Collector Emitter Breakdown(Max)	600 V	1200 V
Current - Collector(Ic)(Max)	80 A	64 A
Current - Collector Pulsed(Icm)	120 A	160 A
Vce(on)(Max) @ Vge Ic	2.5V @ 15V, 40A	3.2V @ 15V, 40A
Power - Max	349 W	417 W
Switching Energy	1.3mJ (on), 260µJ (off)	2.3mJ (on), 1.1mJ (off)
Input Type	Standard	Standard
Gate Charge	119 nC	220 nC
Td(on / off) @ 25°C	12ns/92ns	15ns/110ns
Test Condition	400V, 40A, 6Ohm, 15V	600V, 40A, 5Ohm, 15V
Mounting Type	Through Hole	Through Hole
Reverse Recovery Time (trr)	90 ns	-
Operating Temperature	-55°C ~ 175°C (TJ)	-

Compare RFQ