IR2110PBF vs IR2112-1PBF

Esta comparação detalhada entre IR2110PBF e IR2112-1PBF fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IR2110PBF

Tecnologias Infineon

Lifecycle: Active
Stock: 2445 PCS
Package: DIP-14
Series: PMIC - Gate Drivers

+Lista de Materiais RFQ

Part B

IR2112-1PBF

Tecnologias Infineon

Lifecycle: Active
Stock: 9586 PCS
Package: DIP-14
Series: PMIC - Gate Drivers

+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IR2110PBF	IR2112-1PBF
Part Status	Active	Obsolete
Driven Configuration	Half-Bridge	High-Side or Low-Side
Channel Type	Independent	Independent
Number of Drivers	2	2
Gate Type	IGBT, N-Channel MOSFET	IGBT, N-Channel MOSFET
Voltage - Supply	3.3V ~ 20V	10V ~ 20V
Logic Voltage - VILVIH	6V, 9.5V	6V, 9.5V
Current - Peak Output(Source Sink)	2A, 2A	250mA, 500mA
Input Type	Non-Inverting	Non-Inverting
High Side Voltage - Max(Bootstrap)	500 V	600 V
Rise / Fall Time(Typ)	25ns, 17ns	80ns, 40ns
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole

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