IRF7853TRPBF vs IRF7842TRPBF

Esta comparação detalhada entre IRF7853TRPBF e IRF7842TRPBF fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification IRF7853TRPBF IRF7842TRPBF
Series HEXFET® HEXFET®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 40 V
Current - Continuous Drain(Id) @ 25°C - 18A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 5mOhm @ 17A, 10V
Vgs(th)(Max) @ Id - 2.25V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 50 nC @ 4.5 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 4500 pF @ 20 V
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number IRF7853 -
Current - Continuous Drain (Id) @ 25°C 8.3A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 18mOhm @ 8.3A, 10V -
Vgs(th) (Max) @ Id 4.9V @ 100µA -
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 25 V -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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