IRFB4227PBF vs IRFB4127PBF

Esta comparação detalhada entre IRFB4227PBF e IRFB4127PBF fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFB4227PBF IRFB4127PBF
Series HEXFET® HEXFET®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain(Id) @ 25°C 65A (Tc) 76A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 24mOhm @ 46A, 10V 20mOhm @ 44A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 98 nC @ 10 V 150 nC @ 10 V
Vgs(Max) ±30V ±20V
Input Capacitance(Ciss)(Max) @ Vds 4600 pF @ 25 V 5380 pF @ 50 V
Power Dissipation (Max) 330W (Tc) 375W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
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