IRFP4229PBF vs IRFP4368PBF

Esta comparação detalhada entre IRFP4229PBF e IRFP4368PBF fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFP4229PBF

Rectificador Internacional

Lifecycle: Active
Stock: 2338 PCS
Package: TO-247-3
Series: Transistors - FETs, MOSFETs - Single

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Part B

IRFP4368PBF

Rectificador Internacional

Lifecycle: Active
Stock: 2190 PCS
Package: TO-247
Series: Transistors - FETs, MOSFETs - Single

+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRFP4229PBF	IRFP4368PBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V	75 V
Current - Continuous Drain(Id) @ 25°C	44A (Tc)	195A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	46mOhm @ 26A, 10V	1.85mOhm @ 195A, 10V
Vgs(th)(Max) @ Id	5V @ 250µA	4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	110 nC @ 10 V	570 nC @ 10 V
Vgs(Max)	±30V	±20V
Input Capacitance(Ciss)(Max) @ Vds	4560 pF @ 25 V	19230 pF @ 50 V
Power Dissipation (Max)	310W (Tc)	520W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole

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